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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF177/D

The RF MOSFET Line

RF Power

Field Effect Transistors

N±Channel Enhancement Mode MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push±pull configurations. Can be used in manual gain control, ALC and modulation circuits.

• Typical Performance at 400 MHz, 28 V: Output Power Ð 100 W

Gain Ð 12 dB

2

Efficiency Ð 60%

• Low Thermal Resistance			6
•	Low Crss Ð 10 pF Typ @ V DS = 28 Volts	5, 8		1, 4
•	Low Crss Ð 10 pF Typ @ V DS = 28 Volts
•	Ruggedness Tested at Rated Output Power		7
•	Ruggedness Tested at Rated Output Power		7
•	Nitride Passivated Die for Enhanced Reliability
•	Nitride Passivated Die for Enhanced Reliability
• Excellent Thermal Stability; Suited for Class A					3
• Excellent Thermal Stability; Suited for Class A
	Operation
	Operation

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

MRF177

100 W, 28 V, 400 MHz

N±CHANNEL

BROADBAND

RF POWER MOSFET

CASE 744A±01, STYLE 2

Rating	Symbol	Value	Unit

Drain±Source Voltage	VDSS	65	Vdc
Drain±Gate Voltage (RGS = 1.0 MΩ)	VDGR	65	Vdc
Gate±Source Voltage	VGS	±40	Vdc
Drain Current Ð Continuous	ID	16	Adc
Total Device Dissipation @ TC = 25°C (1)	PD	270	Watts
Derate above 25°C		1.54	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Temperature Range	TJ	200	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction±to±Case	RθJC	0.65	°C/W

(1) Total device dissipation rating applies only when the device is operated as an RF push±pull amplifier.

NOTE Ð CAUTION Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 8

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF177
	1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic (1)	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage	V(BR)DSS	65	Ð	Ð	Vdc
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current	IDSS	Ð	Ð	2.0	mAdc
(VDS = 28 V, VGS = 0)
Gate±Source Leakage Current	IGSS	Ð	Ð	1.0	μAdc
(VGS = 20 V, VDS = 0)
ON CHARACTERISTICS (1)

Gate Threshold Voltage	VGS(th)	1.0	3.0	6.0	Vdc
(VDS = 10 V, ID = 50 mA)
Drain±Source On±Voltage	VDS(on)	Ð	Ð	1.4	Vdc
(VGS = 10 V, ID = 3.0 A)
Forward Transconductance	gfs	1.8	2.2	Ð	mhos
(VDS = 10 V, ID = 2.0 A)
DYNAMIC CHARACTERISTICS (1)

Input Capacitance	Ciss	Ð	100	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance	Coss	Ð	105	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance	Crss	Ð	10	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS (Figure 8) (2)

Common Source Power Gain	GPS	10	12	Ð	dB
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
Drain Efficiency	η	55	60	Ð	%
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
Electrical Ruggedness	ψ		No Degradation
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,			in Output Power
Load VSWR = 30:1, All Phase Angles At Frequency of Test)			Before & After Test

(1) Note each transistor chip measured separately

(2) Both transistor chips operating in push±pull amplifier

MRF177	MOTOROLA RF DEVICE DATA
2

TYPICAL CHARACTERISTICS

	140
	140		f = 150 MHz
(WATTS)	120		f = 150 MHz

							225	MHz
	100
POWER


	80

OUTPUT								400 MHz
	40							400 MHz
	40
,	60
	60



out
out											VDD	= 28 V
P	20										VDD	= 28 V
	20										IDQ	= 200 mA
											IDQ	= 200 mA
	0
	0	0		2			4			6			8		10
						Pin, INPUT POWER (WATTS)
			Figure 1. Output Power versus Input Power
	140
	140										Pin = 10 W
(WATTS)	120										Pin = 10 W

					IDQ	= 200		mA


POWER	100				f = 400 MHz									6.3 W
	100

	80
	80													4 W
														4 W
OUTPUT	40
,	60
	60



out
out
P	20
	20
	0

		10	12	14	16		18		20	22	24		26	28	30
					VDD, SUPPLY VOLTAGE (VOLTS)

Figure 3. Output Power versus Supply Voltage

	50
	50

(WATTS)	40						f	= 225		MHz
(WATTS)


POWER	30								400 MHz
POWER

OUTPUT,	20
OUTPUT,
out
	10
	10													V	DD	= 13.5	V
P															DD
	0													IDQ = 200			mA

		0			2				4				6			8			10
							Pin, INPUT POWER (WATTS)
			Figure 2. Output Power versus Input Power
	100
	100		f	= 400		MHz					VDS	= 28 V
	90		f	= 400		MHz					VDS	= 28 V
(WATTS)	90		P	in	=	CONSTANT					IDQ	= 200		mA
	80		P	in	=	CONSTANT					IDQ	= 200		mA


POWER	70
	70
	50
OUTPUT	60
OUTPUT	30
,	40
	40


out	20
out	20
P
	10
	10
	0
	0	±5	±4		±3		±2		±1		0		1		2	3		4	5
						VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 4. Output Power versus Gate Voltage

	420								140			100
	360						Ciss		120
(pF)	360								120	(pF)CAPACITANCE	(AMPS)
(pF)	300								100	(pF)CAPACITANCE	(AMPS)	20
												20
												10
CAPACITANCE,							VGS = 0 V				CURRENTDRAIN	10				TC = 25° C
CAPACITANCE,	120						VGS = 0 V		40	iss	CURRENTDRAIN					TC = 25° C
	240						f = 1 MHz		80			4
												4
	180								60			2
							Coss			,		1
oss							Coss			,C		1
oss										,C	D
C											,	0.4
C	60				Crss				20	rss	I	0.4
	60								20	C		0.2
												0.2
	0	0	4	8	12	16	20	24	0			0.1	1	2	4	6	10	20	40 60	100
	0	0	4	8	12	16	20	24	28			0.1	1	2	4	6	10	20	40 60	100
				VDS, DRAIN±SOURCE VOLTAGE (VOLTS)											VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 5. Capacitance versus Drain Voltage

Figure 6. DC Safe Operating Area

MOTOROLA RF DEVICE DATA	MRF177
	3

f = 400 MHz

Zo = 10 Ω

	ZOL*
	200
	150
Zin	100

200

150

100

NOTE: Input and Output Impedance values given are measured gate±to±gate and drain±to±drain respectively.

VDD = 28 V IDQ = 200 mA Pout = 100 W

f	Zin		ZOL*
(MHz)	Ohms		Ohms

100	2.0 ± j11.5		3.5 ± j6

150	2.05	± j9.45	3.35	± j5.34

200	2.1	± j7.5	3.3	± j4.4

400	2.35 + j0.4		3.2 ± j1.38

ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency.

Figure 7. Impedance or Admittance Coordinates

MRF177	MOTOROLA RF DEVICE DATA
4

					VDD = 28 V
		D1			+	L1
				R3		L1
				R3
	R2	C14	+	+	C16	FERRITE BEAD	C17	+
	R2			C15	C16	FERRITE BEAD	C17	C18
						FERRITE BEAD
	R1					FERRITE BEAD
				R4			L2
	+	T2			MRF177		L2
	+	T2			MRF177	T3
	C13					T3
	C2			C5			C10
RF				MS1		MS3
RF				C7		C8			RF
INPUT	T1	C4		C7		C8
INPUT	T1	C4		MS2		MS4	C9	T4
C1	C3			C6			C9	T4	OUTPUT
	C3			C6			C11		C12
						D.U.T.			C12
				R5		D.U.T.
				R5
	MICROSTRIP DETAIL	0.325″			0.325″
	MICROSTRIP DETAIL

0.15″	0.10″
	0.10″
0.45″	MS1
0.45″
0.45″	MS2
0.15″	0.10″
0.15″

0.15″

0.10″

MS3 0.45″

MS4	0.45″
0.10″	0.15″
	0.15″

	0.325″	0.325″
C1, C12	1±10 pF JOHANSON OR EQUIVALENT D1		1N5347B, 20 Vdc
C2, C3, C5, C6, C10, C11	270 pF ATC 100 MIL CHIP CAP	L1	1±TURN NO. 18, 0.25″ , 2±HOLE FERRITE BEAD
C4, C9	1±20 pF	L2	8±1/2 TURNS NO. 18, CLOSE WOUND .375″ DIA.
C7	36 pF CHIP CAP	R1, R4, R5	10 kW @ 1/2 W RESISTOR
C8	10 pF CHIP CAP	R2	10 kW, 10 TURN RESISTOR
C13, C14	0.1 mFD @ 50 Vdc	R3	2.0 kW @ 1/2 W RESISTOR
C15, C18	10 mFD @ 50 Vdc	T1	1±1/2 T, 50 W COAX, .034″ DIA. ON DUAL 0.5″ FERRITE CORE
C16	500 pF BUTTON	T2	2.0″ 25 W COAX, .075″ DIA.
C17	1000 pF UNCASED MICA	T3	2.1″ 10 W COAX, .075″ DIA.
		T4	4.0″ 50 W COAX, .0865″ DIA.
		BOARD	Dielectric Thickness = 0.060″ 2oz Copper, Cu±Clad, Teflon Fiberglass, er = 2.55

Figure 8. Test Circuit Electrical Schematic

MOTOROLA RF DEVICE DATA	MRF177
	5

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