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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Designer's Data Sheet

Insulated Gate Bipolar Transistor

N±Channel Enhancement±Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage±blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high tempera-

ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high

frequencies. This new E±series introduces an energy efficient, ESD protected, and short circuit rugged device.

•Industry Standard TO±220 Package

•High Speed: Eoff = 60 mJ/A typical at 125°C

•High Voltage Short Circuit Capability ± 10 ms minimum at 125°C, 400 V

•Low On±Voltage 2.0 V typical at 5.0 A, 125°C

•	Robust High Voltage Termination	C
•	ESD Protection Gate±Emitter Zener Diodes

G

E

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MGP7N60E

IGBT IN TO±220

9.0 A @ 90°C

10 A @ 25°C

600 VOLTS

SHORT CIRCUIT RATED LOW ON±VOLTAGE

G

C

E

CASE 221A±09

TO±220AB

Rating	Symbol		Value	Unit

Collector±Emitter Voltage	VCES		600	Vdc
Collector±Gate Voltage (RGE = 1.0 MW)	VCGR		600	Vdc
Gate±Emitter Voltage Ð Continuous	VGE		± 20	Vdc
Collector Current Ð Continuous @ T C = 25°C	IC25		10	Adc
Ð Continuous @ T C = 90°C	IC90		7.0
Ð Repetitive Pulsed Current (1)	ICM		14	Apk
Total Power Dissipation @ TC = 25°C	PD		81	Watts
Derate above 25°C			0.65	W/°C

Operating and Storage Junction Temperature Range	TJ, Tstg		± 55 to 150	°C
Short Circuit Withstand Time	tsc		10	ms
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W)
Thermal Resistance Ð Junction to Case ± IGBT	RqJC		1.5	°C/W
Ð Junction to Ambient	RqJA		65
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds	TL		260	°C
Mounting Torque, 6±32 or M3 screw		10 lbfSin (1.13 NSm)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer's Data for ªWorst Caseº Conditions Ð The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's is a trademark of Motorola, Inc.

	IGBT Device Data	1
	Motorola,Inc. 1997

MGP7N60E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±to±Emitter Breakdown Voltage		V(BR)CES				Vdc
(VGE = 0 Vdc, IC = 25 mAdc)			600	Ð	Ð	mV/°C
Temperature Coefficient (Positive)			Ð	870	Ð	mV/°C

Emitter±to±Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)		V(BR)ECS	15	Ð	Ð	Vdc
Zero Gate Voltage Collector Current		ICES				mAdc
(VCE = 600 Vdc, VGE = 0 Vdc)			Ð	Ð	10
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)			Ð	Ð	200
Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)		IGES	Ð	Ð	50	mAdc
ON CHARACTERISTICS (1)

Collector±to±Emitter On±State Voltage		VCE(on)				Vdc
(VGE = 15 Vdc, IC = 2.5 Adc)			Ð	1.6	1.9
(VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125°C)			Ð	1.5	Ð
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)			Ð	2.0	2.4
Gate Threshold Voltage		VGE(th)				Vdc
(VCE = VGE, IC = 1.0 mAdc)			4.0	6.0	8.0	mV/°C
Threshold Temperature Coefficient (Negative)			Ð	10	Ð	mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc)		gfe	Ð	2.5	Ð	Mhos
DYNAMIC CHARACTERISTICS

Input Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Cies	Ð	610	Ð	pF
Output Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Coes	Ð	60	Ð
Output Capacitance	f = 1.0 MHz)	Coes	Ð	60	Ð
Transfer Capacitance		Cres	Ð	10	Ð
SWITCHING CHARACTERISTICS (1)

Turn±On Delay Time		td(on)	Ð	22	Ð	ns
Rise Time	(VCC = 360 Vdc, IC = 5.0 Adc,	tr	Ð	24	Ð
	VGE = 15 Vdc, L = 300 mH,
Turn±Off Delay Time	VGE = 15 Vdc, L = 300 mH,	td(off)	Ð	64	Ð
Turn±Off Delay Time	RG = 20 W, TJ = 25°C)	td(off)	Ð	64	Ð
	RG = 20 W, TJ = 25°C)
Fall Time	Energy losses include ªtailº	tf	Ð	196	Ð
Turn±Off Switching Loss		Eoff	Ð	0.20	0.34	mJ
Turn±On Delay Time		td(on)	Ð	31	Ð	ns
Rise Time	(VCC = 360 Vdc, IC = 5.0 Adc,	tr	Ð	24	Ð
	VGE = 15 Vdc, L = 300 mH,
Turn±Off Delay Time	VGE = 15 Vdc, L = 300 mH,	td(off)	Ð	195	Ð
Turn±Off Delay Time	RG = 20 W, TJ = 125°C)	td(off)	Ð	195	Ð
Fall Time	Energy losses include ªtailº	tf	Ð	220	Ð
Turn±Off Switching Loss		Eoff	Ð	0.38	Ð	mJ
Gate Charge	(VCC = 360 Vdc, IC = 5.0 Adc,	QT	Ð	27.2	Ð	nC
	(VCC = 360 Vdc, IC = 5.0 Adc,	Q1	Ð	7.0	Ð
	VGE = 15 Vdc)	Q1	Ð	7.0	Ð
		Q2	Ð	13.7	Ð
INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance		LE				nH
(Measured from the emitter lead 0.25″	from package to emitter bond pad)		Ð	7.5	Ð

(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2	Motorola IGBT Device Data

	20				20 V	17.5 V				20
					20 V	17.5 V
(AMPS)		TJ = 25°C					15 V		(AMPS)
(AMPS)	15								(AMPS)	15
CURRENT							12.5 V		CURRENT
CURRENT	10								CURRENT	10
, COLLECTOR	10								, COLLECTOR	10
	5						VGE = 10 V			5

C									C
I									I
	0									0
	0	1	2	3	4	5	6	7	8
		VCE(on), COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

							MGP7N60E
	TJ = 125°C			20 V	17.5 V		15 V
							15 V

						12.5 V
						VGE = 10 V
0	1	2	3	4	5		6	7	8
	VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics

Figure 2. Output Characteristics

	12								COLLECTOR±TO±EMITTER ON±STATE		2.2
,COLLECTOR CURRENT (AMPS)	10	VCE = 100 V									2.0
		5 mS PULSE WIDTH
	8									VOLTAGE (VOLTS)	1.8
	6										1.6
					TJ = 125°C
	4						25°C				1.4
							25°C
	2										1.2
C	2								,		1.2
I	0								CE(on)		1.0
	0	6	7	8	9	10	11	12	V		1.0
	5	6	7	8	9	10	11	12	13

VGE, GATE±TO±EMITTER VOLTAGE (VOLTS)

						IC = 5.0	A
						3.75 A
						2.5 A
		VGE = 15 V
		80 mS PULSE WIDTH
±50	±25	0	25	50	75	100		125	150
		TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Transfer Characteristics

Figure 4. VCE versus Junction Temperature

	1200
					VGE = 0 V
	1000				TJ = 25°C
(pF)	800			Cies
CAPACITANCE	800			Cies
	600
	400
C,	400
C,				Coes
				Coes
	200
	0		Cres
	0			15	20	25
	0	5	10	15	20	25

VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 5. Capacitance Variation

(VOLTS)	20
(VOLTS)	16
VOLTAGE	16			QT
				QT
	12	Q1		Q2
GATE±TO±EMITTER	12

	8
	4						TJ = 25°C
	4						IC = 5.0 A
							IC = 5.0 A
,
GE
V	0
	0
	0	5	10	15	20	25	30	35

Qg, TOTAL GATE CHARGE (nC)

Figure 6. VGE versus Total Charge

Motorola IGBT Device Data

3

MGP7N60E

Eoff , TURN±OFF ENERGY LOSSES (mJ)

0.5	VCC = 360 V										0.5
	VCC = 360 V									(mJ)		VCC = 360 V
	V	GE	= 15 V							(mJ)		VCC = 360 V
		GE	°							LOSSES		V		= 15 V
			°									V		= 15 V
0.4	TJ = 125 C						IC = 5.0 A				0.4		GE
										ENERGY		RG = 20 W					IC = 5.0 A
0.3							3.75 A			ENERGY	0.3
0.3											0.3

										TURN±OFF,							3.75 A
0.1										TURN±OFF,	0.1
0.2							2.5 A				0.2						2.5 A
																	2.5 A
										off
										E
0											0
	10		15	20	25	30	35	40	45	50	0			25	50	75	100	125	150
					GATE RESISTANCE (W)									TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Turn±Off Losses versus Gate

Figure 8. Turn±Off Losses versus Junction

				Resistance									Temperature
	0.6									100
LOSSESENERGYTURN±OFF(mJ)	0.5	VCC = 360 V							(AMPS)CURRENTCOLLECTOR	RGE = 20 W
LOSSESENERGYTURN±OFF(mJ)		VGE = 15 V							(AMPS)CURRENTCOLLECTOR	RGE = 20 W


		RG = 20 W
	0.4	TJ = 125°C
	0.3									10
	0.2									VGE = 15 V
										VGE = 15 V
,	0.1								C	T		= 125°C
off									,		J
off									I		J
E
	0	1	2	3	4				8	1		10	100	1000
	0	1	2	3	4	5	6	7	8	1		10	100	1000
			IC, COLLECTOR CURRENT (AMPS)									VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 9. Turn±Off Energy Losses versus	Figure 10. Reverse Biased Safe Operating
Collector Current	Area

4	Motorola IGBT Device Data

MGP7N60E

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 9:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±09

TO±220AB

ISSUE Z

Motorola IGBT Device Data

5

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