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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N4264/D

General Purpose Transistors

NPN Silicon

				COLLECTOR
					3
			2


			BASE

					1
						EMITTER
MAXIMUM RATINGS

Rating	Symbol	2N4264	2N4265			Unit

Collector± Emitter Voltage	VCEO	15	12			Vdc
Collector± Base Voltage	VCBO	30				Vdc
Emitter± Base Voltage	VEBO	6.0				Vdc
Collector Current Ð Continuous	IC	200				mAdc
Total Device Dissipation @ TA = 25°C	PD	350				mW
Derate above 25°C		2.8				mW/°C

Total Device Dissipation @ TC = 25°C	PD	1.0				Watts
Derate above 25°C		8.0				mW/°C

Operating and Storage Junction	TJ, Tstg	± 55 to +150				°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max				Unit

Thermal Resistance, Junction to Ambient	RqJA	357				°C/W
Thermal Resistance, Junction to Case	RqJC	125				°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N4264

2N4265

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage			V(BR)CEO	15	Ð	Vdc
(IC = 1.0 mAdc, IB = 0)		2N4264		15	Ð
		2N4265		12	Ð

Collector± Base Breakdown Voltage			V(BR)CBO	30	Ð	Vdc
(IC = 10 mAdc, IE = 0)
Emitter± Base Breakdown Voltage			V(BR)EBO	6.0	Ð	Vdc
(IE = 10 mAdc, IC = 0)
Base Cutoff Current			IBEV	Ð	0.1	μAdc
(VCE = 12	Vdc, VEB(off) = 0.25 Vdc)			Ð	0.1
(VCE = 12	Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)			Ð	10
Collector Cutoff Current			ICEX	Ð	100	nAdc
(VCE = 12	Vdc, VEB(off) = 0.25 Vdc)

REV 1

Motorola, Inc. 1996

2N4264

2N4265

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

hFE

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

2N4264

2N4265

(IC = 10 mAdc, VCE = 1.0 Vdc)

2N4264

160

2N4265

100

400

(IC = 10 mAdc, VCE = 1.0 Vdc, TA = ±55°C)

2N4264

2N4265

(IC = 30 mAdc, VCE = 1.0 Vdc)

2N4264

2N4265

(IC = 100 mAdc, VCE = 1.0 Vdc)(1)

2N4264

2N4265

(I = 200 mAdc, V

= 1.0 Vdc)(1)

2N4264

2N4265

Collector± Emitter Saturation Voltage

VCE(sat)

0.22

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

(I = 100 mAdc, I

= 10 mAdc)(1)

0.35

Base ± Emitter Saturation Voltage

VBE(sat)

0.65

0.8

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)(1)

0.75

0.95

SMALL± SIGNAL CHARACTERISTICS

Current± Gain Ð Bandwidth Product (I C = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

300

MHz

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

8.0

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)

Cobo

4.0

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 10 Vdc, VEB(off) = 2.0 Vdc,

8.0

Rise Time

IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C)

Storage Time

VCC = 10 Vdc, (IC = 10 mAdc, for ts)

(IC = 100 mA for tf)

Fall Time

(IB1 = ±10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C)

Turn±On Time

(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc,

ton

IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)

Turn±Off Time

(VCC = 3.0 Vdc, IC = 10 mAdc,

toff

IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)

Storage Time

(VCC = 10 Vdc, IC = 10 mA,

IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)

Total Control Charge

(VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc)

(Fig. 3, Test Condition A)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Figure 1. Switching Time Equivalent Test Circuit

VCC

Test

VCC

ton

toff

Condition

CS(max)

VBE(off)

3300

270

±1.5

10.55

±4.15

10.70

VEB(off)

560

960

±4.65

6.55

< 2 ns

100

560

±2.0

6.35

±4.65

6.55

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

(IB1) and IB1 < <

2N4264 2N4265

CURRENT GAIN CHARACTERISTICS

	100											2N4264
												2N4264
	70											VCE = 1 V
GAIN	50					TJ = 125°C
	50					25°C

, DC CURRENT
	30					±15°C
	30
						± 55°C
FE	20
h
	10									70	100	200
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200
						IC, COLLECTOR CURRENT (mA)

	200
						TJ = 125°C						2N4265
						TJ = 125°C						VCE = 1 V
GAIN	100					25°C
	100

CURRENT	70					±15°C
	70
	50					± 55°C
, DC	50					± 55°C
, DC
FE
h	30
	30
	20									70	100	200
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200
						IC, COLLECTOR CURRENT (mA)

Figure 2. Minimum Current Gain

		270 Ω
t1	3 V
t1		8 pF		C < COPT
+10 V				C < COPT	C = 0
+10 V					C = 0
V		CS < 4 pF	C	COPT
0	<1 ns	CS < 4 pF	C	COPT
	<1 ns	9.2 kΩ
PULSE WIDTH (t1) = 5 μs	DUTY CYCLE = 2%			TIME

Figure 3. QT Test Circuit

Figure 4. Turn±Off Waveform

NOTE 1

When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or ªstoredº in the transistor.QS may be

written: QS = Q1 + QV + QX.

Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collector±base feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation.

The charge required to turn a transistor ªonº to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step

IC . hFE

If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turn±off time of the transistor. Figure 3 shows the test circuit and Figure 4 the turn±off waveform. Given QT from Figure 13, the external C for worst±case turn±off in any circuit is: C = QT/ V, where V is defined in Figure 3.

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N4264 2N4265

ªONº CONDITION CHARACTERISTICS

		1.0
, MAXIMUM COLLECTOR±EMITTER														2N4264
		0.8												TJ = 25°C
		0.8		IC = 10 mA				50 mA		100 mA			200 mA
	VOLTAGE (VOLTS)			IC = 10 mA				50 mA		100 mA			200 mA
		0.6
		0.4
		0.2
CE
V
		0	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
		0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
								IB, BASE CURRENT (mA)
		1.0
, MAXIMUM COLLECTOR±EMITTER														2N4265
		0.8												TJ = 25°C
		0.8				50 mA		100 mA			200 mA
	VOLTAGE (VOLTS)	IC = 10 mA				50 mA		100 mA			200 mA
		0.6
		0.4
		0.2
CE
V
		0	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
		0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
								IB, BASE CURRENT (mA)

Figure 5. Collector Saturation Region

	1.2													(mV/COEFFICIENTS°C)	1.0
(VOLTS)VOLTAGESATURATION			IC/IB = 10
(VOLTS)VOLTAGESATURATION	1.0	TJ = 25°C								MAX VBE(sat)					0.5	qVC for VCE(sat)			(25°C to 125°C)
	1.0	TJ = 25°C								MAX VBE(sat)					0.5				(25°C to 125°C)

	0.8									MIN VBE(sat)					0				(±55°C to 25°C)
	0.6													TEMPERATURE	± 0.5
V	0.4									MAX VCE(sat)				TEMPERATURE	± 1.0				(25°C to 125°C)
																			(25°C to 125°C)
																qVB for VBE
																qVB for VBE			(±55°C to 25°C)
,																			(±55°C to 25°C)
,
sat	0.2														± 1.5
														,
														V
	0													θ	± 2.0
	0	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200		± 2.0	40	80	120	160	200
		1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200		0	40	80	120	160	200
					IC, COLLECTOR CURRENT (mA)												IC, COLLECTOR CURRENT (mA)

Figure 6. Saturation Voltage Limits

Figure 7. Temperature Coefficients

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N4264 2N4265

DYNAMIC CHARACTERISTICS

	200
						VCC = 10 V
	100					TJ = 25°C
	100
(ns)	70
(ns)	50			td @ VEB(off) = 3 V
TIME	50			td @ VEB(off) = 3 V
TIME
DELAY	30				2 V
	20				2 V
	20
,
d
t
	10				0 V
	7.0
	5.0					50	100	200
	1.0	2.0	5.0	10	20	50	100	200

IC, COLLECTOR CURRENT (mA)

Figure 8. Delay Time

	50
							TJ = 25°C
	30		IC/IB = 20				TJ = 125°C
(ns)	30		IC/IB = 20			IC/IB = 10
(ns)						IC/IB = 10
,STORAGE TIME	20
,STORAGE TIME	10
s	10
t
	7.0					ts′^ ts ± 1/8 tf
						IB1 = IB2
	5.0					50	100	200
	1.0	2.0	5.0	10	20	50	100	200

IC, COLLECTOR CURRENT (mA)

Figure 10. Storage Time

	10
						MAX
						TYP
	7.0		Cibo
(pF)			Cibo
(pF)
CAPACITANCE	5.0
CAPACITANCE						Cobo
	3.0					Cobo
	3.0
	2.0					5.0	10
	0.1	0.2	0.5	1.0	2.0	5.0	10

REVERSE BIAS (Vdc)

Figure 12. Junction Capacitance

	200						IC/IB = 10
							IC/IB = 10
	100						TJ = 25°C
	100						TJ = 125°C
	70						TJ = 125°C
(ns)	70			VCC = 10 V
(ns)	50			VCC = 10 V
TIME	50
TIME	30
, RISE	30
, RISE	20		VCC = 3 V
r
t
	10
	7.0
	5.0					50	100	200
	1.0	2.0	5.0	10	20	50	100	200
			IC, COLLECTOR CURRENT (mA)

Figure 9. Rise Time

	200
							VCC = 10 V
	100						TJ = 25°C
	100						TJ = 125°C
							TJ = 125°C
(ns)	70
(ns)	50
TIME	50
TIME	30
, FALL	30					IC/IB = 20
	20					IC/IB = 20
	20
f
t
	10			IC/IB = 10
	10
	7.0
	5.0					50	100	200
	1.0	2.0	5.0	10	20	50	100	200
			IC, COLLECTOR CURRENT (mA)

Figure 11. Fall Time

	1000
	700		IC/IB = 10
	500		TJ = 25°C
			TJ = 125°C
(pC)	300
(pC)	200
CHARGE	200
							QT
	100	VCC = 3 V
Q,	70	VCC = 3 V
Q,

	50	VCC = 10 V					QA
	30	VCC = 10 V					QA
	30	VCC = 3 V
		VCC = 3 V
	20	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200

IC, COLLECTOR CURRENT (mA)

Figure 13. Maximum Charge Data

Motorola Small±Signal Transistors, FETs and Diodes Device Data

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