Материал: 9729
DISCRETE SEMICONDUCTORS
book, halfpage
M3D114
1PS301
High-speed double diode
Product specification |
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1996 Apr 03 |
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File under Discrete Semiconductors, SC01 |
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Philips Semiconductors |
Product specification |
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High-speed double diode |
1PS301 |
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FEATURES
∙Very small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 80 V
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA
∙Forward voltage: max. 1.2 V.
APPLICATIONS
∙High-speed switching in e.g. surface mounted circuits.
LIMITING VALUES
DESCRIPTION
The 1PS301 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70 package.
PINNING
PIN |
DESCRIPTION |
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1 |
anode (a1) |
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2 |
anode (a2) |
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3 |
common cathode |
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2 |
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1 |
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2 
1
3
3
Top view |
MAM084 |
Marking code: B3.
Fig.1 Simplified outline (SC70) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VRRM |
repetitive peak reverse voltage |
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− |
85 |
V |
VR |
continuous reverse voltage |
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80 |
V |
IF |
continuous forward current |
single diode loaded; see Fig.2; |
− |
250 |
mA |
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note 1 |
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double diode loaded; see Fig.2; |
− |
160 |
mA |
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note 1 |
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IFRM |
repetitive peak forward current |
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− |
500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge |
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t = 1 μs |
− |
4 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
− |
300 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 03 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed double diode |
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1PS301 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
610 |
− |
mV |
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IF = 10 mA |
740 |
− |
mV |
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IF = 50 mA |
− |
1.0 |
V |
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IF = 100 mA |
− |
1.2 |
V |
IR |
reverse current |
see Fig.4 |
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VR = 25 V |
− |
30 |
nA |
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VR = 80 V |
− |
0.5 |
μA |
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VR = 25 V; Tj = 150 °C |
− |
30 |
μA |
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VR = 80 V; Tj = 150 °C |
− |
100 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.5 |
− |
1.5 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
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4 |
ns |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.6 |
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Vfr |
forward recovery voltage |
when switched from IF = 10 mA; |
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1.75 |
V |
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tr = 20 ns; see Fig.7 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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200 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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415 |
K/W |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 03 |
3 |
Philips Semiconductors |
Product specification |
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High-speed double diode |
1PS301 |
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GRAPHICAL DATA
MBG444
300 handbook, halfpage
IF
(mA) (1)
200
(2)
100
0
0 |
100 |
Tamb |
o |
C) |
200 |
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Device mounted on an FR4 printed-circuit board.
(1)Single diode loaded.
(2)Double diode loaded.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
MBG382
300 handbook, halfpage
IF (mA)
(1) |
(2) |
(3) |
200
100
0
0 |
1 |
VF |
(V) |
2 |
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(1)Tj = 150 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage.
MBG380
102 handbook, halfpage
IR
(μA)
10
(1) |
(2) |
(3) |
1
10 1
10 2
0 |
100 |
Tj |
( |
o |
C) |
200 |
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(1)VR = 80 V; maximum values.
(2)VR = 80 V; typical values.
(3)VR = 25 V; typical values.
Fig.4 Reverse current as a function of junction temperature.
MBG446
0.8 handbook, halfpage
Cd (pF)
0.6
0.4
0.2
0
0 |
4 |
8 |
12 VR (V) 16 |
f = 1 MHz; Tj = 25 °C.
Fig.5 Diode capacitance as a function of reverse voltage; typical values.
1996 Apr 03 |
4 |
Philips Semiconductors |
Product specification |
|
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High-speed double diode |
1PS301 |
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handbook, full pagewidth |
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t r |
t p |
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t |
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D.U.T. |
10% |
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R = 50 Ω |
IF |
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I F |
t rr |
S |
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SAMPLING |
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t |
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OSCILLOSCOPE |
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V = VR IF x R S |
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R i = 50 Ω |
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90% |
(1) |
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VR |
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MGA881 |
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input signal |
output signal |
(1) IR = 1 mA.
Fig.6 Reverse recovery voltage test circuit and waveforms.
I |
1 k Ω |
450 Ω |
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I |
90% |
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V |
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RS = 50 Ω |
OSCILLOSCOPE |
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V fr |
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D.U.T. |
Ω |
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R i = 50 |
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10% |
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MGA882 |
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t |
t |
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t r |
t p |
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input |
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output |
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signal |
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signal |
Fig.7 Forward recovery voltage test circuit and waveforms.
1996 Apr 03 |
5 |
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