Материал: mrf6409rev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF6409/D
The RF Line |
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NPN |
Silicon |
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RF |
Power Transistor |
MRF6409 |
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The MRF6409 is designed for GSM base stations applications. It incorpo- |
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rates high value emitter ballast resistors, gold metallizations and offers a high |
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degree of reliability and ruggedness. |
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• To be used in Class AB |
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• Specified 26 Volts, 960 MHz Characteristics |
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20 W, 960 MHz |
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Output Power Ð 20 Watts CW |
RF POWER TRANSISTOR |
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Gain Ð 11 dB Typ |
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NPN SILICON |
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Efficiency Ð 60% Typ |
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CASE 319±07, STYLE 2
MAXIMUM RATINGS
Rating |
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Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
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VCEO |
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24 |
Vdc |
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Collector±Emitter Voltage |
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VCES |
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55 |
Vdc |
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Emitter±Base Voltage |
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VEBO |
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4.0 |
Vdc |
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Collector±Current Ð Continuous |
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IC |
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5.0 |
Adc |
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Total Device Dissipation @ TC = 25°C |
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PD |
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45 |
Watts |
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Derate above 25°C |
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0.26 |
W/°C |
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Storage Temperature Range |
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Tstg |
± 65 to +150 |
°C |
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Operating Junction Temperature |
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TJ |
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200 |
°C |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case (1) |
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RθJC |
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3.8 |
°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage |
V(BR)CEO |
24 |
30 |
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Vdc |
(IC = 20 mAdc, IB = 0) |
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Emitter±Base Breakdown Voltage |
V(BR)EBO |
4.0 |
5.0 |
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Vdc |
(IB = 5.0 mAdc, IC =0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CES |
55 |
60 |
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Vdc |
(IC = 20 mAdc, VBE = 0) |
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Collector±Cutoff Current |
ICES |
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Ð |
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6.0 |
mA |
(VCE = 30 Vdc, VBE = 0) |
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(1) Thermal resistance is determined under specified RF operating condition.
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
MRF6409 |
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ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
hFE |
20 |
35 |
80 |
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(ICE = 1.0 Adc, VCE = 5.0 Vdc) |
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DYNAMIC CHARACTERISTICS
Output Capacitance |
Cob |
Ð |
18 |
Ð |
pF |
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) |
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FUNCTIONAL TESTS
Common±Emitter Amplifier Power Gain |
Gpe |
10 |
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11 |
Ð |
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dB |
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) |
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Collector Efficiency |
η |
50 |
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60 |
Ð |
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% |
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) |
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Load Mismatch |
Ψ |
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(VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz, |
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No Degradation in Output Power |
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Load VSWR = 3:1, All Phase Angles at Frequency of Test) |
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T1 |
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+ |
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5.0 V |
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C8 |
R2 |
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C7 |
D2 |
R3 |
P1 |
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B2 |
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D1 |
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+ |
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C6 |
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C9 |
C10 |
C11 |
26 V |
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± |
R1 |
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C3 |
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B1 |
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C5 |
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RF OUTPUT |
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RF INPUT |
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C1 |
C2 |
C4 |
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D.U.T. |
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B1, B2 |
Ferrite Bead |
C11 |
4.7 μF, 50 V, Tantalum Capacitor |
C1 |
3.3 pF, Chip Capacitor, High Q |
D1, D2 |
Diode BAS16 Type or Equivalent |
C2, C3 |
4.7 pF, Chip Capacitor, High Q |
P1 |
1.0 kΩ, Trimmer |
C4 |
2.2 pF, Chip Capacitor, High Q |
R1 |
3.3 Ω, Chip Resistor |
C5 |
82 pF, Chip Capacitor, High Q |
R2 |
68 Ω, Chip Resistor |
C6, C9 |
330 pF, Chip Capacitor, High Q |
R3 |
2.2 kΩ, Resistor |
C7, C10 |
0.1 μF, Chip Capacitor |
T1 |
NPN Transistor |
C8 |
22 μF, 16 V, Tantalum Capacitor |
Board |
Glass Teflon , εr = 2.55, H = 1/50 inch |
Figure 1. Test Circuit Electrical Schematic
MRF6409 |
MOTOROLA RF DEVICE DATA |
2 |
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TYPICAL CHARACTERISTICS |
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30 |
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25 |
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24 |
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(WATTS) |
25 |
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(WATTS) |
22 |
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23 |
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POWER |
20 |
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POWER |
20 |
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15 |
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OUTPUT, |
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OUTPUT, |
21 |
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18 |
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VCE = 26 V |
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19 |
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10 |
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out |
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VCE = 26 V |
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out |
17 |
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I = 50 mA |
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P |
5.0 |
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IQ = 50 mA |
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P |
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Q |
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16 |
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Pin = 1 W |
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f = 960 MHz |
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0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
2.2 |
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15 |
930 |
940 |
950 |
960 |
970 |
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0 |
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920 |
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Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power (CW)
f, FREQUENCY (MHz)
Figure 3. Output Power versus Frequency (CW)
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13 |
(WATTS) |
25 |
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(WATTS) |
12 |
20 |
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11 |
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POWER |
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POWER |
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10 |
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OUTPUT, |
10 |
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OUTPUT, |
9.0 |
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out |
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IQ = 50 mA |
out |
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5.0 |
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f = 960 MHz |
8.0 |
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P |
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P |
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Pin = 1, 6 W |
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0 |
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7.0 |
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18 |
20 |
22 |
24 |
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26 |
0 |
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VCE, SUPPLY VOLTAGE (VOLTS) |
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Figure 4. Output Power versus Supply Voltage (CW)
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70% |
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60% |
(%) |
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50% |
EFFICIENCY |
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40% |
COLLECTOR,η |
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IQ = 50 mA |
20% |
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30% |
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f = 960 MHz |
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10% |
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5.0 |
10 |
15 |
20 |
25 |
30 |
35 |
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Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain and Efficiency
versus Output Power
Gp, POWER GAIN (dB)
13 |
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65% |
(dBc) |
0 |
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12.5 |
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VCE = 26 V |
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VCE = 26 V |
(%)EFFICIENCYCOLLECTOR,η |
DISTORTIONINTERMODULATION |
±50 |
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±10 |
ICQ = 50 mA |
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12 |
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60% |
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f1 = 960 MHz |
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11.5 |
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±20 |
f2 = 960, 1 MHz |
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11 |
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55% |
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±30 |
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10.5 |
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±40 |
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10 |
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50% |
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9.5 |
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IQ = 50 mA |
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IMD, |
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9.0 |
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45% |
±60 |
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920 |
930 |
940 |
950 |
960 |
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1.0 |
10 |
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910 |
970 |
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0.1 |
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f, FREQUENCY (MHz) |
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Pout, OUTPUT POWER (WATTS) PEP |
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Figure 6. Typical Broadband Performances |
Figure 7. Intermodulation Distortion |
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versus Output Power |
MOTOROLA RF DEVICE DATA |
MRF6409 |
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3 |
f = 980 MHz
Zin
920
Zo = 10 Ω
f |
Zin |
ZOL* |
(MHz) |
(Ω) |
(Ω) |
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920 |
1.4 + j3.0 |
3.2 ± j2.5 |
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940 |
1.5 + j3.9 |
3.5 ± j1.88 |
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960 |
1.5 + j4.2 |
3.9 ± j2.5 |
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980 |
1.6 + j4.4 |
4.0 ± j2.8 |
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920 |
f = 980 MHz |
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ZOL*
ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency.
Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 50 mA, Pout = 20 W (CW)
MRF6409 |
MOTOROLA RF DEVICE DATA |
4 |
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Figure 9. 960 MHz Test Circuit RF, Photomaster Scale 1:1 (Reduced 25% in printed data book, DL110/D)
C6 |
C7 |
C8 |
C9 |
B2 |
C10 |
C11 |
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B |
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R2 |
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R1 |
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C3 |
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C5 |
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B1 |
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C1 |
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C2 |
C4 |
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Figure 10. 960 MHz Test Circuit RF, Photomaster Scale 1:1
and Components Location (Reduced 25% in printed data book, DL110/D)
MOTOROLA RF DEVICE DATA |
MRF6409 |
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5 |
Смотрите также:
| 05_Холера |
| 1 |
| 10.4. Исследование регистров |
| 1112 |
| 12 |
| 1285 |
| 1560 |
| 1568 |
| 1604248853606027 |
| 1673 |