Материал: mhpm7b8a120arev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM7B8A120A/D
Hybrid Power Module
Integrated Power Stage for 1.0 hp Motor Drives
This module integrates a 3±phase input rectifier bridge, 3±phase output inverter and brake transistor/diode in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free±wheeling diodes to give optimal dynamic performance. It has been configured for use as a three±phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board.
•Short Circuit Rated 10 μs @ 25°C
•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
•Convenient Package Outline
•UL
Recognized and Designed to Meet VDE 
•Access to Positive and Negative DC Bus
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
MHPM7B8A120A
Motorola Preferred Device
8.0 AMP, 1200 VOLT HYBRID POWER MODULE
PLASTIC PACKAGE
CASE 440-01, Style 1
Rating |
Symbol |
Value |
Unit |
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INPUT RECTIFIER BRIDGE |
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Repetitive Peak Reverse Voltage |
VRRM |
1200 |
V |
Average Output Rectified Current (1) |
IO |
8.0 |
A |
Peak Non-repetitive Surge Current |
IFSM |
200 |
A |
OUTPUT INVERTER |
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IGBT Reverse Voltage |
VCES |
1200 |
V |
Gate-Emitter Voltage |
VGES |
± 20 |
V |
Continuous IGBT Collector Current |
IC |
8.0 |
A |
Peak IGBT Collector Current ± (PW = 1.0 ms) (2) |
IC(pk) |
16 |
A |
Continuous Free-Wheeling Diode Current |
IF |
8.0 |
A |
Peak Free-Wheeling Diode Current ± (PW = 1.0 ms) (2) |
IF(pk) |
16 |
A |
IGBT Power Dissipation |
PD |
50 |
W |
Free-Wheeling Diode Power Dissipation |
PD |
30 |
W |
IGBT Junction Temperature Range |
TJ |
± 40 to +125 |
°C |
Free-Wheeling Diode Junction Temperature Range |
TJ |
± 40 to +125 |
°C |
(1) 1 cycle = 50 or 60 Hz |
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(2) 1 ms = 1.0% duty cycle |
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Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
MOTOROLA
1
MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
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BRAKE CIRCUIT |
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IGBT Reverse Voltage |
VCES |
1200 |
V |
Gate-Emitter Voltage |
VGES |
± 20 |
V |
Continuous IGBT Collector Current |
IC |
8.0 |
A |
Peak IGBT Collector Current (PW = 1.0 ms) (2) |
IC(pk) |
16 |
A |
IGBT Power Dissipation |
PD |
50 |
W |
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Diode Reverse Voltage |
VRRM |
1200 |
V |
Continuous Output Diode Current |
IF |
8.0 |
A |
Peak Output Diode Current (PW = 1.0 ms) (2) |
IF(pk) |
16 |
A |
TOTAL MODULE |
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Isolation Voltage ± (47±63 Hz, 1.0 Minute Duration) |
VISO |
2500 |
VAC |
Ambient Operating Temperature Range |
TA |
± 40 to + 85 |
°C |
Operating Case Temperature Range |
TC |
± 40 to + 90 |
°C |
Storage Temperature Range |
Tstg |
± 40 to +150 |
°C |
Mounting Torque |
± |
6.0 |
lb±in |
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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INPUT RECTIFIER BRIDGE |
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Reverse Leakage Current (VRRM = 1200 V) |
IR |
± |
10 |
50 |
μA |
Forward Voltage (IF = 8.0 A) |
VF |
± |
1.05 |
1.5 |
V |
Thermal Resistance (Each Die) |
RθJC |
± |
± |
2.9 |
°C/W |
OUTPUT INVERTER |
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Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) |
IGES |
± |
± |
± 20 |
μA |
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) |
ICES |
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TJ = 25°C |
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± |
± |
100 |
μA |
TJ = 125°C |
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± |
± |
500 |
μA |
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) |
VGE(th) |
4.0 |
6.0 |
8.0 |
V |
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) |
V(BR)CES |
1200 |
1300 |
± |
V |
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A) |
VCE(SAT) |
± |
2.5 |
3.5 |
V |
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz) |
Cies |
± |
1000 |
± |
pF |
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V) |
QT |
± |
75 |
± |
nC |
Fall Time ± Inductive Load |
tfi |
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(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) |
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± |
350 |
500 |
ns |
Turn-On Energy |
E(on) |
± |
± |
1.0 |
mJ |
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) |
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Turn-Off Energy |
E(off) |
± |
± |
1.0 |
mJ |
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) |
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Diode Forward Voltage (IF = 8.0 A, VGE = 0 V) |
VF |
± |
1.6 |
2.2 |
V |
Diode Reverse Recovery Time |
trr |
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(IF = 8.0 A, V = 600 V, dI/dt = 50 A/μs) |
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± |
140 |
200 |
ns |
Diode Stored Charge (IF = 8.0 A, V = 600 V, di/dt = 50 A/μs) |
Qrr |
± |
± |
900 |
nC |
Thermal Resistance ± IGBT (Each Die) |
RθJC |
± |
± |
2.2 |
°C/W |
Thermal Resistance ± Free-Wheeling Diode (Each Die) |
RθJC |
± |
± |
3.7 |
°C/W |
(2) 1.0 ms = 1.0% duty cycle |
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MHPM7B8A120A |
MOTOROLA |
2 |
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ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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BRAKE CIRCUIT |
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Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) |
IGES |
± |
± |
± 20 |
μA |
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) |
ICES |
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TJ = 25°C |
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± |
± |
100 |
μA |
TJ = 125°C |
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± |
± |
500 |
μA |
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) |
VGE(th) |
4.0 |
6.0 |
8.0 |
V |
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) |
V(BR)CES |
1200 |
1300 |
± |
V |
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A) |
VCE(SAT) |
± |
2.5 |
3.5 |
V |
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) |
Cies |
± |
1000 |
± |
pF |
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V) |
QT |
± |
75 |
± |
nC |
Fall Time ± Inductive Load |
tfi |
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(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) |
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± |
350 |
500 |
ns |
Turn-On Energy |
E(on) |
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(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) |
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± |
± |
1.0 |
mJ |
Turn-Off Energy |
E(off) |
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± |
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(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω) |
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± |
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1.0 |
mJ |
Diode Forward Voltage (IF = 8.0 A) |
VF |
± |
1.6 |
2.2 |
V |
Diode Reverse Leakage Current |
IR |
± |
± |
50 |
μA |
Thermal Resistance ± IGBT |
RθJC |
± |
± |
2.2 |
°C/W |
Thermal Resistance ± Diode |
RθJC |
± |
± |
3.7 |
°C/W |
MOTOROLA |
MHPM7B8A120A |
|
3 |
4 |
MHPM7B8A120A |
Schematic Stage Power Integrated .1 Figure
MOTOROLA
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1 |
7 |
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P1 |
P2 |
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Q1 |
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Q3 |
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Q5 |
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D1 |
11 |
D3 |
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D5 |
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G1 |
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G3 |
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G5 |
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E1 |
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E3 |
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E5 |
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U |
20 |
24 |
R |
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V |
19 |
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B |
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S |
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W |
18 |
22 |
T |
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Q7 |
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Q2 |
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Q4 |
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Q6 |
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15 |
16 |
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D2 |
17 |
D4 |
14 |
D6 |
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G7 |
G2 |
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G4 |
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G6 |
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N1 |
N2 |
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25 |
6 |
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NC |
2 |
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DEVICE INTEGRATION |
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NC |
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3 |
These pins are physical |
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= PIN NUMBER IDENTIFICATION |
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terminations but not |
3±Phase |
Brake |
3±Phase |
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NC |
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4 |
connected internally. |
Input |
Output |
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IGBT/ |
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Rectifier |
IGBT/Diode |
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Diode |
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NC |
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5 |
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Bridge |
Bridge |
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Typical Characteristics
I F , FORWARD CURRENT (A)
16
12
TJ = 125°C |
25°C |
8
4
0
0 |
0.5 |
1.0 |
1.5 |
VF, FORWARD VOLTAGE (V)
Figure 2. Input Bridge Forward Current IF versus Forward Voltage VF
I F , FORWARD CURRENT (A)
16
12
TJ = 125°C |
25°C |
8
4
0 |
1 |
2 |
3 |
4 |
0 |
VF, FORWARD VOLTAGE (V)
Figure 3. Output Inverter Forward Current IF versus Forward Voltage VF
(A) |
1000 |
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rr |
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I |
(ns) |
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REVERSEPEAKRECOVERY CURRENT |
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TJ = |
125°C |
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rr |
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100 |
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trr |
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25°C |
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REVERSERECOVERYTIMEt |
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TJ = |
125°C |
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10 |
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I |
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° |
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rr |
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25 C |
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1 |
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±di/dt |
= 50 |
A/μs |
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6 |
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IF, FORWARD CURRENT (A)
Figure 4. Output Inverter Reverse Recovery trr, Irr versus Forward Current IF
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25 |
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VGE = 18 V |
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TJ = |
125°C |
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15 V |
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(A) |
20 |
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CURRENT |
15 |
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12 V |
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COLLECTOR, |
10 |
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I |
5 |
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C |
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9 V |
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0 |
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16 |
20 |
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VCE, COLLECTOR±EMITTER VOLTAGE (V)
Figure 6. Ouput Inverter Collector Current IC versus Collector±Emitter Voltage VCE
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VGE = 18 V |
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TJ = |
25°C |
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(A) |
20 |
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15 V |
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CURRENT |
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12 V |
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COLLECTOR, |
10 |
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C |
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I |
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9 V |
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0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (V)
Figure 5. Output Inverter Collector Currrent IC versus Collector±Emitter Voltage VCE
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10 |
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(V) |
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IC = 4 A |
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8 A |
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16 A |
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TJ = |
25°C |
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VOLTAGE |
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8 |
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EMITTER- |
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6 |
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COLLECTOR |
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2 |
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4 |
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CE |
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V |
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0 |
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10 |
12 |
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VGE, GATE±EMITTER VOLTAGE (V)
Figure 7. Inverter Collector±Emitter Voltage VCE
versus Gate±Emitter Voltage VGE
MOTOROLA |
MHPM7B8A120A |
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5 |