Документ: BUT33REV, страницы 6-8 | Студенческое хранилище

BUT33

The Safe Operating Area figures shown in Figures 16 and 17 are specified for the devices under the test conditiond shown.

	60						10 μs
	30				100 μs		10 μs
(AMPS)					100 μs

	10				1 ms
				DC
CURRENT

	3.0
,COLLECTOR	1.0
	0.5
	0.3
C	0.3
I		TC = 25°C
		TC = 25°C
	0.1
	1	5	10	30	100	300	1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 16. Safe Operating Area

(AMPS)	60
(AMPS)
CURRENT	40
CURRENT
COLLECTOR	20
COLLECTOR
, PEAK		°	V	BE(off)	= 5 V
		TC = 25 C		BE(off)
		IC/IB = 10
CM
I
	0	200	400		600
	0	200	400		600

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subject to greater dissipation than the curves indicate.

The data of Figure 16 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC y 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode Figure 17 gives the RBSOA characteristics.

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 17. Reverse Bias Safe Operating Area

	100
(FACTOR)	80			SECOND BREAKDOWN
				SECOND BREAKDOWN
					DERATING
	60
DERATING	60
DERATING	40		THERMAL
POWER			DERATING
POWER	20
	20
	0	40	80	120	160	200
	0	40	80	120	160	200
			IC, CASE TEMPERATURE (°C)

Figure 18. Power Derating

6	Motorola Bipolar Power Transistor Device Data

BUT33

PACKAGE DIMENSIONS

A

N

C

±T±

SEATING

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

E

PLANE

Y14.5M, 1982.

D 2 PL

K

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

0.30 (0.012) M

T

Q

M

Y

M

DIM

MIN

MAX

MIN

MAX

U

A

1.530 REF

38.86 REF

±Y±

B

0.990

1.050

25.15

26.67

V

L

C

0.250

0.335

6.35

8.51

2

D

0.057

0.063

1.45

1.60

B

E

0.060

0.070

1.53

1.77

H

G

0.430 BSC

10.92 BSC

1

H

0.215 BSC

5.46 BSC

K

0.440

0.480

11.18

12.19

L

0.665 BSC

16.89 BSC

±Q±

N

0.760

0.830

19.31

21.08

0.25 (0.010) M

T

Y

M

Q

0.151

0.165

3.84

4.19

U

1.187 BSC

30.15 BSC

V

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 197A±05

TO±204AE (TO±3)

ISSUE J

Motorola Bipolar Power Transistor Device Data

7

BUT33

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