Документ: BUT33REV, страницы 1-5 | Студенческое хранилище

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode

The BUT33 Darlington transistor is designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as:

•AC and DC Motor Controls

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Fast Turn Off Times

800 ns Inductive Fall Time at 25_C (Typ)

2.0μs Inductive Storage Time at 25_C (Typ)

•Operating Temperature Range ±65 to 200_C

≈ 100

≈ 16

BUT33

56 AMPERES

NPN SILICON

POWER DARLINGTON

TRANSISTOR

600 VOLTS

250 WATTS

CASE 197A±05

TO±204AE

(TO±3)

MAXIMUM RATINGS

Rating	Symbol	BUT33	Unit

Collector±Emitter Voltage	VCEO(sus)	400	Vdc
Collector±Emitter Voltage	VCEV	600	Vdc
Emitter Base Voltage	VEB	10	Vdc
Collector Current Ð Continuous	IC	56	Adc
Collector Current Ð Peak (1)	ICM	75
Base Current Ð Continuous	IB	12	Adc
Base Current Ð Peak (1)	IBM	15
Free Wheel Diode Forward Current Ð Continuous	IF	56	Adc
Free Wheel Diode Forward Current Ð Peak	IFM	75
Total Power Dissipation @ TC = 25_C	PD	250	Watts
@ TC = 100_C		140
Derate above 25_C			_
			W/ C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	0.7	_C/W
Maximum Lead Temperature for Soldering Purpose	TL	275	_C
1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x10%.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

REV 7

Motorola, Inc. 1995

BUT33

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (Table 1)			VCEO(sus)	400	Ð	Ð	Vdc
(IC = 100 mA, IB = 0)
Collector Cutoff Current			ICEV				mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)				Ð	Ð	0.2
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)				Ð	Ð	4.0
Emitter Cutoff Current			IEBO	Ð	Ð	350	mAdc
(VEB = 20 V, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased			IS/b		See Figure 16
Clamped Inductive SOA with Base Reverse Biased			RBSOA		See Figure 17

ON CHARACTERISTICS (1)

DC Current Gain			hFE		Ð	Ð
(IC = 20 A, VCE = 5 V)				30	Ð	Ð
(IC = 36 A, VCE = 5 V)				20	Ð	Ð
Collector±Emitter Saturation Voltage			VCE(sat)				Vdc
(IC = 20 A, IB = 1 A)				Ð	Ð	2.0
(IC = 36 A, IB = 3.6 A)				Ð	Ð	2.5
(IC = 44 A, IB = 4.4 A)				Ð	Ð	3.0
(IC = 56 A, IB = 11.2 A)				Ð	Ð	5.0
Base±Emitter Saturation Voltage			VBE(sat)				Vdc
(IC = 20 A, IB = 1 A)				Ð	Ð	2.5
(IC = 36 A, IB = 3.6 A)				Ð	Ð	2.9
(IC = 44 A, IB = 4.4 A)				Ð	Ð	3.3
Diode Forward Voltage			Vf	Ð	Ð	4.0	Vdc
(IF = 44 A)
SWITCHING CHARACTERISTICS
Inductive Load Clamped (Table 1)

Storage Time	TC = 25_C	IC = 36 A	ts	Ð	2.0	3.3	μs
Fall Time		IB = 3.6 A	tf	Ð	0.8	1.6	μs
Storage Time		See Table 1	ts	Ð	2.2	Ð	μs
Fall Time	TC = 100_C	VBE(off) = 5 V	t	Ð	0.8	Ð	μs
			f
(1) Pulse Test: PW = 300 μs, Duty Cycle x 2%.

2	Motorola Bipolar Power Transistor Device Data

BUT33

TYPICAL CHARACTERISTICS

	400										(VOLTS)
	200										(VOLTS)
CURRENT GAIN	100										VOLTAGE	4
	100
	50											3
	30											3
	30
	20											2						IC = 40 A
, DC	10										COLLECTOR±EMITTER,	2
	10																IC = 20 A

FE	5
h	3	TC = 25°C										1
h	2	VCE = 5.0 V											TC = 25°C
	1										CE	0
	1	2	3	4	6	10	20	30	40	60	V	0	0.2	0.3	0.5	1	2	3	5	7	10
	1	2	3	4	6	10	20	30	40	60		0.1	0.2	0.3	0.5	1	2	3	5	7	10
			IC, COLLECTOR CURRENT (AMPS)												IB, BASE CURRENT (AMPS)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

(VOLTS)	2.5	TC = 25°C
VOLTAGE	2.2	IC/IB = 10
	2.2
	1.9
COLLECTOR±EMITTER	1.9
	1.6
	1.3
	1.0
	0.7
,
CE	0.4
V	0.4	2	3	5	7	10	20	30	50
	1	2	3	5	7	10	20	30	50

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

(VOLTS)	3.2	TC = 25°C
(VOLTS)	2.8	IC/IB = 10
VOLTAGE	2.8
	2.5

, BASE±EMITTER	2.2
	1.9
	1.6

BE	1.3
V	1.3
	1.0	2	3	5	7	10	20	30	50
	1	2	3	5	7	10	20	30	50

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base±Emitter Voltage

		1
EFFECTIVE TRANSIENT THERMAL		0.7	D = 0.5
		0.5	D = 0.5
	RESISTANCE (NORMALIZED)	0.5
		0.3	0.2
		0.2	0.1
			0.1														P(pk)
		0.1	0.05								RθJC(t) = r(t) RθJC						P(pk)
		0.07	0.05								RθJC(t) = 1.17°C/W MAX
		0.07									RθJC(t) = 1.17°C/W MAX
		0.05	0.02								D CURVES APPLY FOR POWER
		0.05									PULSE TRAIN SHOWN						t1
				0.01							PULSE TRAIN SHOWN
		0.03		0.01							READ TIME AT t1							t2
		0.03	SINGLE PULSE								READ TIME AT t1							t2
		0.02									TJ(pk) ± TC = P(pk) RθJC(t)						DUTY CYCLE, D = t /t
		0.02									TJ(pk) ± TC = P(pk) RθJC(t)						DUTY CYCLE, D = t /t
r(t),																				1 2
r(t),
		0.01
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500	1000

t, TIME (ms)

Figure 5. Thermal Response

Motorola Bipolar Power Transistor Device Data

3

BUT33

Table 1. Test Conditions for Dynamic Performance

INPUT CONDITIONS

VALUES

CIRCUIT TEST CIRCUITS

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

TEST CIRCUIT

for

+10 V

FREE±WHEEL

20 Ω

22 μF

DIODE

33

D1

1

2N6438

2 W

160

D3

5 V

MR854

+

220

100

0

MM3735

22

680 pF

2

Ib1 ADJUST

D1 D2 D3 D4

1N4934

1

μF

I

ADJUST

DRIVER

VD

PULSES

680 pF

b2

PW Varied to Attain

22

dTb ADJUST

δ = 3%

2N3763

dT

IC = 100 mA

D4

680 pF

100

MR854

ID

160

33

D3

2N6339

±

Lcoil = 10 mH, VCC = 10 V

Lcoil = 180 μH

2 W

22 μF

VCC

R

coil

= 0.7 Ω

R

coil

= 0.05 Ω

Vclamp = VCEO(sus)

VCC = 10 V

AV

up to

INDUCTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

t1 Adjusted to

50 V

TUT

IC

tf Clamped

Obtain IC

Rcoil

ICM

Lcoil (ICM)

1

t1 [

CRONETICS

1N4937

t1

tf

t

V

510

VD

INPUT

OR

Lcoil

CC

PG130

Lcoil (ICM)

up to

SEE ABOVE FOR

EQUIVALENT

t2 [

50 V

5 μs

DETAILED CONDITIONS

Vclamp

VCC

VCE VCEM

Vclamp

1%

ID

2

RS =

t

Test Equipment

t2

Scope Ð Tektronix

0.1 Ω

TIME

475 or Equivalent

t, TIME ( μs)

15

10

5

3

2

1

0.5

0.3

0.2

0.1

10

8

6

5

4

3

2

1

										5							TC = 25°C
							TC = 25°C			4		σ tF = 200 ns					TC = 25°C
							TC = 25°C			3		σ tF = 200 ns					I	/I = 20
							IC/IB = 5					IC = 20 A σ t	S	= 400 ns			tS	C B
							IC/IB = 5			2		IC = 20 A σ t		= 400 ns
										2
		IC = 50 A							(μs)	1								10 V
		IC = 50 A							(μs)			VBE(off) = 5 V

									t, TIME
	40°C								t, TIME	0.5
	40°C
										0.3
			IC = 25 A							0.2				VBE(off) = 5 V				10 V	IC/IB	= 10
																			IC/IB	= 10
										0.1								tF
1	2	3	4	5	6	7	8	9	10	0.1	1	2		3	5	7	10	20	30	50
1	2	3	4	5	6	7	8	9	10		1	2		3	5	7	10	20	30	50
				Ib2/Ib1									IC, COLLECTOR CURRENT (AMPS)

	Figure 6. Fall Time versus IB2/IB1											Figure 7. Turn±Off Time versus IC
										10
										8								TC = 25°C
					I	= 25 A												IC/IB = 5
					C					6
										6	IC = 25 A
									μs)	5	IC = 25 A
									μs)

				IC = 50 A					(
				IC = 50 A					TIME	4
										4
									t,
										3	IC = 50 A
TC = 25°C										2	IC = 50 A							I = 10 A
TC = 25°C										2								I = 10 A
VBE(off) = 5 V																		C
VBE(off) = 5 V
1	2	3	4	5	6	7	8	9	10	1	1	2	3	4	5	6	7	8	9	10
1	2	3	4	5	6	7	8	9	10		1	2	3	4	5	6	7	8	9	10
			βf, FORCED GAIN												Ib2/Ib1
Figure 8. Storage Time versus Forced Gain												Figure 9. Storage Time versus Ib2/Ib1

4	Motorola Bipolar Power Transistor Device Data

BUT33

FREE±WHEEL DIODE CHARACTERISTICS

		I
		di/dt = 25 A/μs
		IFM		(AMPS)
		25 IRM		(AMPS)
		25 IRM
1	Id	trr	t	CURRENT
		IRM		EMITTER,
0				EMITTER,
VD	DYN
	10 (VDYN VFM)
	VFM			E
	VFM			I
	TFR

Figure 10. Free Wheel Diode Measurements

50

±σ + σ

40

30

20

10				TC = 25°C
0	1	2	3	4	5
0

VEC, EMITTER COLLECTOR VOLTAGE (VOLTS)

Figure 11. Forward Voltage

(VOLTS)VOLTAGEMODULATIONFORWARD,	30						(AMPS)CURRENTRECOVERYREVERSEPEAK	50
	30							50
	25								TC = 25°C
	25							40
								40
	20
								30
	15
								20
	10
	5		40°C		°			10
dyn	0		40°C		TC = 25 C		RM	0
							,
V	0	10	20	30	40	50	I	0	10	20	30	40	50
	0	10	20	30	40	50		0	10	20	30	40	50

IE, EMITTER CURRENT (AMPS)	IE, EMITTER CURREMT (AMPS)
Figure 12. Forward Modulation Voltage	Figure 13. Peak Reverse Recovery Current

( μs)	2.2	TC = 25°C
TIME	2.0
RECOVERY	1.8
	1.6

FORWARD	1.4
FORWARD	1.2
,
FR	1.0
T	1.0
	0.8	10	20	30	40	50
	0	10	20	30	40	50

	15
μs)	10	T	C	= 25°C
(			C
TIME	7
TIME	5
RECOVERY	5
	3
	2
,REVERSE	1
,REVERSE	0.7
RR	0.7
RR	0.5
T	0.5
	0.3			10	20	30	40	50
	0			10	20	30	40	50

IE, EMITTER CURRENT (AMPS)	IE, EMITTER CURRENT (AMPS)
Figure 14. Forward Recovery Time	Figure 15. Reverse Recovery Time

Motorola Bipolar Power Transistor Device Data

5

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