Материал: 2N4402RE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N4402/D
General Purpose Transistors
PNP Silicon
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COLLECTOR |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Collector± Emitter Voltage |
VCEO |
40 |
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Vdc |
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Collector± Base Voltage |
VCBO |
40 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
600 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watt |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N4402
2N4403*
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector± Emitter Breakdown Voltage(1) |
V(BR)CEO |
40 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
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Collector± Base Breakdown Voltage |
V(BR)CBO |
40 |
Ð |
Vdc |
(IC = 0.1 mAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
5.0 |
Ð |
Vdc |
(IE = 0.1 mAdc, IC = 0) |
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Base Cutoff Current |
IBEV |
Ð |
0.1 |
μAdc |
(VCE = 35 Vdc, VEB = 0.4 Vdc) |
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Collector Cutoff Current |
ICEX |
Ð |
0.1 |
μAdc |
(VCE = 35 Vdc, VEB = 0.4 Vdc) |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
2N4402 |
2N4403 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
30 |
Ð |
Ð |
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(IC = 0.1 mAdc, VCE = 1.0 Vdc) |
2N4403 |
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(IC = 1.0 mAdc, VCE = 1.0 Vdc) |
2N4402 |
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30 |
Ð |
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2N4403 |
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60 |
Ð |
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(IC = 10 mAdc, VCE = 1.0 Vdc) |
2N4402 |
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50 |
Ð |
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2N4403 |
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100 |
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(I |
= 150 mAdc, V |
= 2.0 Vdc)(1) |
2N4402 |
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50 |
150 |
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C |
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CE |
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2N4403 |
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100 |
300 |
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(I |
= 500 mAdc, V |
= 2.0 Vdc)(1) |
Both |
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20 |
Ð |
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C |
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CE |
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Collector± Emitter Saturation Voltage(1) |
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VCE(sat) |
Ð |
0.4 |
Vdc |
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(IC = 150 mAdc, IB = 15 mAdc) |
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(IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
0.75 |
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Base ± Emitter Saturation Voltage(1) |
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VBE(sat) |
0.75 |
0.95 |
Vdc |
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(IC = 150 mAdc, IB = 15 mAdc) |
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(IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
1.3 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
150 |
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MHz |
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(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) |
2N4402 |
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2N4403 |
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200 |
Ð |
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Collector±Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Ccb |
Ð |
8.5 |
pF |
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Emitter±Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
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Ceb |
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30 |
pF |
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Input Impedance |
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hie |
750 |
7.5 k |
ohms |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N4402 |
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2N4403 |
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1.5 k |
15 k |
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Voltage Feedback Ratio (I |
= 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) |
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h |
0.1 |
8.0 |
X 10±4 |
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C |
CE |
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re |
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Small±Signal Current Gain |
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hfe |
30 |
250 |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N4402 |
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2N4403 |
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60 |
500 |
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Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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hoe |
1.0 |
100 |
μmhos |
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SWITCHING CHARACTERISTICS |
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Delay Time |
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(VCC = 30 Vdc, VBE = +2.0 Vdc, |
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td |
Ð |
15 |
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Rise Time |
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IC = 150 mAdc, IB1 = 15 mAdc) |
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t |
Ð |
20 |
ns |
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r |
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Storage Time |
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(VCC = 30 Vdc, IC = 150 mAdc, |
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ts |
Ð |
225 |
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Fall Time |
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IB1 = 15 mA, IB2 = 15 mA) |
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t |
Ð |
30 |
ns |
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f |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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SWITCHING TIME EQUIVALENT TEST CIRCUIT
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± 30 V |
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< 2 ns |
200 |
Ω |
< 20 ns |
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+2 V |
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+14 V |
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0 |
1.0 kΩ |
0 |
1.0 kΩ |
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CS* < 10 pF |
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± 16 V |
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±16 V |
1.0 to 100 μs, |
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10 to 100 μs, |
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DUTY CYCLE = 2% |
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DUTY CYCLE = 2% |
Scope rise time < 4.0 ns |
+ 4.0 V |
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*Total shunt capacitance of test jig connectors, and oscilloscope |
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± 30 V 
200 Ω
CS* < 10 pF
Figure 1. Turn±On Time |
Figure 2. Turn±Off Time |
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N4402 2N4403
TRANSIENT CHARACTERISTICS
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25°C |
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30 |
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20 |
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Ceb |
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(pF) |
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CAPACITANCE |
10 |
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7.0 |
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5.0 |
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Ccb |
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2.0 |
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20 |
30 |
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0.1 |
0.2 |
0.3 |
0.5 0.7 |
1.0 |
2.0 |
3.0 |
5.0 7.0 |
10 |
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
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100°C |
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10 |
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7.0 |
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VCC = 30 V |
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5.0 |
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IC/IB = 10 |
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3.0 |
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(nC) |
2.0 |
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Q, CHARGE |
1.0 |
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0.7 |
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0.5 |
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QT |
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0.3 |
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QA |
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0.2 |
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0.1 |
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30 |
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200 |
300 |
500 |
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10 |
20 |
50 |
70 |
100 |
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IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
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100 |
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70 |
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IC/IB = 10 |
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50 |
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tr @ VCC = 30 V |
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(ns) |
30 |
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tr @ VCC = 10 V |
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td @ VBE(off) = 2 V |
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t, TIME |
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20 |
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td @ VBE(off) = 0 |
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10 |
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7.0 |
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5.0 |
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200 |
300 |
500 |
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70 |
100 |
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IC, COLLECTOR CURRENT (mA)
Figure 5. Turn±On Time
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100 |
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70 |
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VCC = 30 V |
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50 |
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IC/IB = 10 |
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(ns) |
30 |
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TIME |
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20 |
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, RISE |
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r |
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t |
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10 |
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7.0 |
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5.0 |
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200 |
300 |
500 |
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70 |
100 |
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IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
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200 |
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IC/IB = 10 |
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(ns) |
100 |
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TIME |
70 |
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IC/IB = 20 |
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′, STORAGE |
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50 |
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IB1 = IB2 |
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ts′= ts ± 1/8 tf |
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30 |
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20 |
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30 |
50 |
70 |
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200 |
300 |
500 |
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10 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 7. Storage Time
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
2N4402 2N4403
SMALL±SIGNAL CHARACTERISTICS
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NOISE FIGURE |
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VCE = ±10 Vdc, TA = 25°C |
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Bandwidth = 1.0 Hz |
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10 |
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10 |
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f = 1 kHz |
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8 |
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8 |
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(dB) |
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IC = 1.0 mA, RS = 430 Ω |
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(dB) |
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FIGURE |
6 |
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FIGURE |
6 |
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IC = 50 μA |
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IC = 500 μA, RS = 560 Ω |
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100 μA |
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IC = 50 μA, RS = 2.7 kΩ |
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NF, NOISE |
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NF, NOISE |
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500 μA |
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4 |
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IC = 100 μA, RS = 1.6 kΩ |
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4 |
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1.0 mA |
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2 |
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RS = OPTIMUM SOURCE RESISTANCE |
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0 |
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20 |
50 |
100 |
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0 |
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0.01 0.02 |
0.05 |
0.1 |
0.2 |
0.5 1.0 2.0 5.0 |
10 |
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50 |
100 |
200 |
500 |
1 k |
2 k |
5 k |
10 k |
20 k |
50 k |
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f, FREQUENCY (kHz) |
RS, SOURCE RESISTANCE (OHMS) |
Figure 8. Frequency Effects |
Figure 9. Source Resistance Effects |
h PARAMETERS
VCE = ±10 Vdc, f = 1.0 kHz, TA = 25°C
selected from both the 2N4402 and 2N4403 lines, and the same units were used to develop the correspondingly± numbered curves on each graph.
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1000 |
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700 |
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500 |
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GAIN |
300 |
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, CURRENT |
200 |
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2N4403 UNIT 1 |
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100 |
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2N4403 UNIT 2 |
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fe |
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2N4402 UNIT 1 |
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h |
70 |
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2N4402 UNIT 2 |
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50 |
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30 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
|
100 k |
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50 k |
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2N4403 UNIT 1 |
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(OHMS) |
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2N4403 UNIT 2 |
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20 k |
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2N4402 UNIT 1 |
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10 k |
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2N4402 UNIT 2 |
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IMPEDANCE |
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5 k |
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2 k |
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, INPUT |
1 k |
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500 |
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ie |
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h |
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200 |
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100 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
10±4 ) |
20 |
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10 |
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2N4403 UNIT 1 |
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(X |
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2N4403 UNIT 2 |
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RATIO |
5.0 |
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2N4402 UNIT 1 |
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2N4402 UNIT 2 |
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FEEDBACK |
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2.0 |
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1.0 |
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, VOLTAGE |
0.5 |
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0.2 |
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re |
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h |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
|
500 |
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mhos) |
100 |
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m |
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( |
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ADMITTANCE |
50 |
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20 |
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,OUTPUT |
10 |
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2N4403 UNIT 1 |
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5.0 |
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2N4403 UNIT 2 |
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2N4402 UNIT 1 |
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oe |
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2N4402 UNIT 2 |
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h |
2.0 |
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1.0 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N4402 2N4403
STATIC CHARACTERISTICS
|
3.0 |
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2.0 |
VCE = 1.0 V |
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TJ = 125°C |
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GAIN |
V |
CE |
= 10 V |
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25°C |
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CURRENT |
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1.0 |
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± 55°C |
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,NORMALIZED |
0.7 |
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0.5 |
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0.3 |
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FE |
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h |
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0.2 |
0.2 |
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0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
500 |
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0.1 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 14. DC Current Gain
(VOLTS) |
1.0 |
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VOLTAGE |
0.8 |
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0.6 |
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, COLLECTOR±EMITTER |
IC = 1.0 mA |
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10 mA |
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100 mA |
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500 mA |
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0.4 |
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0.2 |
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CE |
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V |
0 |
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0.01 |
0.02 |
0.03 |
0.05 |
0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
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0.005 |
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IB, BASE CURRENT (mA) |
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Figure 15. Collector Saturation Region
|
1.0 |
TJ = 25°C |
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0.5 |
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0.8 |
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VBE(sat) @ IC/IB |
= 10 |
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0 |
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qVC for VCE(sat) |
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(VOLTS)VOLTAGE |
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(mV/COEFFICIENT°C) |
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0.5 |
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0.6 |
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VBE(sat) @ VCE |
= 10 V |
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1.0 |
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0.4 |
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1.5 |
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0.2 |
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2.0 |
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qVS for VBE |
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VCE(sat) @ IC/IB = 10 |
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0 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
2.5 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
|
0.1 |
0.1 |
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IC, COLLECTOR CURRENT (mA) |
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IC, COLLECTOR CURRENT (mA) |
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Figure 16. ªOnº Voltages |
Figure 17. Temperature Coefficients |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |