Кривые p1P1, p2P2 и p3P3 отражают перитектические превращения, по которым образуются инконгруэнтно плавящиеся соединения Pb3Bi2S6, PbBi2S4 и PbBi6S10.
Линии n1, n2, n3, n4 отражают процессы с участием полиморфных модификаций a SnS и в(SnS).
В системе PbS-Bi2S3-SnS имеются 32 точки нонвариантных равновесий, из них 10 точек тройной эвтектики (E1 ч Е), 3 точки тройной перитектики (P1 ч P3), 17 точек двойной эвтектики (e1 - e17) и 2 точки двойной перитектики (p1 - p3). В табл. 1 и 2 приводятся линии вторичных выделений, нонвариантные точки тройной системы PbS-Bi2S3-SnS и реакции, соответствующие этим равновесиям.
Таким образом, методами физико-химического анализа изучена тройная система PbS-Bi2S3-SnSи построена проекция поверхности ликвидуса. Определены области первичной кристаллизации фаз.
Заключение
Методами дифференциального термического, рентгенофазового, микроструктурного анализов, а также измерением микротвердости и плотности изучены фазовые равновесия квазитройной системы PbS-Bi2S3-SnS.
Построены фазовые диаграммы некоторых политермических разрезов и проекция поверхности ликвидуса.
Установлено образование четверных соединений PbSnBi,S.., PbSnBi,S и PbSnBi,S плавящихся конгруэнтно.
Проекция поверхности ликвидуса системы PbS-Bi2S3-SnS имеет 32 точки нонвариантных равновесий.
Список литературы
1. Messina S.M., Nair T.S, Nair P.K. // Solid Films, 2009. V.517. pp. 2503-2507. DOI: 10.1016/j. tsf.2008.11.060
2. Maghraoui-Meherzi, T H Ben Nasr, N. Kamoun, M. Dachraoui. // Physica B Condensed Matter . 2010. V.405. pp.3101-3105. DOI: 10.1016/j. physb.2010.04.020
3. Maghraoui-Meherzi, T. H Ben Nasr, N. Kamoun, M. Dachraoui. // Comptes Rendus Chimie, 2011. V. 14, pp.471-475. DOI: 10.1016/j. crci.2010.10.007
4. Han, J. Chen, J. Q Lu, X. Yang, L. Lu, X. Wang. // Mater. Lett, 2008. V.62. pp. 2050-2052.
5. Arun A.G. Vedeshwara. J. P // Appl. Phys., 1996. V.79. №8 pp. 4029
6. Shaji, A S. Arato, J.J. O'Brien, J. Liu, G.A. Castillo, M.I.M. Palma, T.K.D. Roy, B. Krishnan. //J. Phys. D: Appl. Phys., 2010. V.43. 075 404.
7. Perales F, F. Agullo-Rueda, J. Lamela, C. de lasHeras. // J. Phys. D:Appl. Phys., 2008. V. 41.045 403.
8. Perales, G. F Lifante, F. Agullo-Rueda, C. de lasHeras. J. Phys. D: Appl. Phys.,2007. V.40. pp.2440.
9. Chung D.Y., Hogan T., Schindler J. еt al. // Proc. XVI Int. Conf. on Thermoelectrics. Dresden (Germany). Danver: IEEE, 1997. pp. 459-462.
10. Knorr K., Ehm L., Hytha M., Winkler В, Depmeier W. // Eur. Phys. J. B. 2003. V.31, No 3. i1. P.297--303
11. G.D. Smith, S. Firth, R.J.H. Clarck, and M. Cardona. // J. Appl. Phys. 2002. V.92. pp. 4375-4380
12. Qadri S.B., Singh A., Yousuf M. // Thin Solid Films. 2003. - V.431-432. - P.506-510.
13. Jung-Hsuan Chen; Chuen-Guang Chao, Jong-Chyan Ou, Tzeng-Feng Liu // Surface Science. 2007. V.601. No 22. p.5142-5147.
14. Yu Jun Yang. // Materials Science and Engineering B. 2006. - V.131, No1-3. pp.200-202.
15. Baolong Yu, Guosheng Yin, Congshan Zhu, Fuxi Gan. // Opt. Mater. 1998. V. 11. № 1. pp. 17-21
16. B. Subramanian, T Mahalingam, C. Sanjeeviraja, M. Jayachandran, M.J. //Thin Solid Films 1999. v. 357. pp. 119-128
17. Martin J. H., Hermandez L., Adell I. // Semicond. Sci. Technol., 1996. №11. pp. 1740
18. Садовников С.И., Ремпель А.А. // Ж. Физика и техника полупроводников, 2010. T.44. №10. с.1394-1400.
19. Латыпов З.М., Файзуллина Н.Р., Савельев В.П. и др. //Ж. Неорган, материалы, 1976. т.12. № 2. с.206-209.
20. Бахтиярлы И.Б., Mамедова Ш.Г., Аждарова Д.С. и. др. // Журн. хим. проб. 2008. № 2. с. 348-350.
21. Господинов Г.Г., Один И.Н., Поповкин Б.А. и др. // Изв. АН СССР. Неорган, материалы, 1979. Т 7. № 3. с. 501-506.
22. Садыхова С.А., Сафаров М.Г., Рустамов П.Г. // ЖНХ, 1977. Т 22. № 10. с. 2831-2835.
23. Мамедов Ш. Г., Курбанов Г.Р. // Журнал неорганической химии, №8 2011. Т 56. с. 13981400.
24. Бахтиярлы И.Б. Аждарова Д.С., Мамедов Ш.Г., Курбанов Г.Р. // Журнал. Химия и химическая технология. Известия высших учебных заведений, 2009. Т.52. вып.4. с.120-122.
25. Курбанов Г.Р. // Журнал химические проблемы, 2012. №4. с.100-110.
26. Messina S.M., Nair T.S, Nair P.K. Solid Films, 2009, 517, pp. 2503-2507. DOI: 10.1016/j. tsf.2008.11.060
27. Maghraoui-Meherzi, T H Ben Nasr, N. Kamoun, M. Dachraoui. Physica B Condensed Matter , 2010, 405, pp.3101-3105. DOI: 10.1016/j. physb.2010.04.020
28. Maghraoui-Meherzi, T H Ben Nasr, N. Kamoun, M. Dachraoui. Comptes Rendus Chimie, 2011, 14, pp.471-475. DOI: 10.1016/j. crci.2010.10.007
29. Han, J. Chen, J. Q Lu, X. Yang, L. Lu, X. Wang. Mater. Lett., 2008, 62, pp. 2050-2052.
30. Arun A.G. Vedeshwara. J. P Appl. Phys., 1996, Vol.79, No.8, pp. 4029.
31. Shaji, A S. Arato, J.J. O'Brien, J. Liu, G.A. Castillo, M.I.M. Palma, T.K.D. Roy, B. Krishnan. J. Phys. D: Appl. Phys., 2010,43, 075 404.
32. Perales F, F. Agullo-Rueda, J. Lamela, C. de lasHeras. J. Phys. D: Appl. Phys., 2008, 41, 045 403.
33. Perales, G. F Lifante, F. Agullo-Rueda, C. de lasHeras. J. Phys. D: Appl. Phys., 2007, 40, pp. 2440.
34. Chung D.Y., Hogan T., Schindler J. et al. Proc. XVI Int. Conf, on Thermoelectrics. Dresden (Germany). Danver: IEEE, 1997, pp. 459-462.
35. Knorr K., Ehm L., Hytha M., Winkler В, Depmeier W. Eur. Phys. J. B. 2003, Vol.31, No. 3, pp.297--303
36. G.D. Smith, S. Firth, R.J.H. Clarck, and M. Cardona, J. Appl. Phys. 2002, 92, pp. 4375-4380
37. Qadri S.B., Singh A., Yousuf M. Thin Solid Films. 2003. Vol.431-432. pp.506-510.
38. Jung-Hsuan Chen; Chuen-Guang Chao, Jong-Chyan Ou, Tzeng-Feng Liu. Surface Science. 2007.Vol.601, No. 22, pp.5142-5147.
39. Yu Jun Yang. Materials Science and Engineering B. 2006, Vol.131, No.1-3, pp.200-202.
40. Baolong Yu, Guosheng Yin, Congshan Zhu, Fuxi Gan. Opt. Mater. 1998, V. 11, No 1. pp. 17-21.
41. B. Subramanian, T Mahalingam, C. Sanjeeviraja, M. Jayachandran, M.J. Chockalingam. Thin Solid Films 1999, Vol. 357, pp. 119-128
42. Martin J. H., Hermandez L., Adell I. Semicond. Sci. Technol., 1996, No 11, pp. 1740
43. Sadovnikov S.I, Rempel A.A. J. Physics and Technology of Semiconductors, 2010, Vol.44, No.10, pp.1394-1400.
44. Latypov Z.M., Fayzullina N.R., Saveliev V.P. et al., Journal inorqanic materials, 1976, Vol.12, No. 2, pp.206-209.
45. Bakhtiyarly I.B, Mamedova Sh.G., Azhdarova D.S. and. et al. Journal of Chemical Problems 2008, No. 2, pp. 348-350
46. Gospodinov G.G., Odin I.N., Popovkin B.A. et al., Inorgan, materials, 1979, Vol. 7, No. 3, pp. 501-506.
47. Sadikova S.A., Safarov M.G., Rustamov P.G. Journal inorganic chemistry 1977, Vol. 22, No. 10, pp.2831-2835.
48. Mamedov Sh. G., Kurbanov G.R. Journal of Inorganic Chemistry, 2011, Vol. 56. No. 8, pp. 13981400.
49. Bakhtiarly I.B. Azhdarova D.S., Mamedov Sh.G., Kurbanov G.R. Journal of Chemistry and chemical technology, 2009, Vol.52. No.4, pp. 120-122.
50. Kurbanov G.R. Journal of Chemical Problems, 2012, No.4, pp.100-110.
PROJECTION OF THE SURFACE OF LIQUIDUS THE QUASI-TEROIN SYSTEM
G. R. Gurbanov, M. B. Adygezalova, R. A. Ismailova
Azerbaijan State University of Oil and Industry
Absrtact. The methods of physicochemical analysis: differential thermal (NTR-73), X-ray phase (DRON-3, CuKб -radiation, Ni-filter), microstructural (MIM-7), microhardness measurement (PMT-3) and determine the density and built a projection of the liquids surface. It is established that three quaternary sulfides - PbSnBTS,, PbSnBTS and PboSnBi,S of the composition, and melting congruently. The compound PbSnBi4S8 melts congruently at a temperature of 825 K. The compound PbSnBi4S8 belongs to the orthorhombic system (in the hexagonal aspect) with parameters a = 19.68; c = 7.91. The results of X-ray analysis showed that the quaternary compound Pb2SnBi2S6crystallizes in rhombic syngony with lattice parameters: a = 15.60; b = 7.8, c = 4.26, avg Pbmm The quadruple compound Pb2SnBi2S6 melts congruently at a temperature of 1000 K. The phase diffractograms PbSnBi6S11 are indexed in a rhombic syngony with the parameters of the unit cell: a = 11.18; b = 4.12, c = 11.54. The fourth compound PbSnBi6S11 melts congruently at a temperature of 880 K and is a phase of variable composition.
By the methods of physicochemical analysis, the nature of the chemical interaction in the studied sections of the SnS-Bi2S3-PbSquasithreefold system has been established. It is established that 10 of them are quasi-binary sections.
According to the study of the above-described quasi- and non-quasibinary sections, a projection of the liquidus surface of the SnS-Bi2S3-PbSquasithreefold system was constructed.
The lines of secondary excretions Bi2S3-SnS, Bi2S3- PbS and PbS-SnS are constructed from the intersection points of the corresponding curves of the primary crystallization of the phases in the systems.
The composition and temperature of the invariant points are graphically determined by extrapolation and the projection of the nodal points to the side, and the concentration triangle. The temperatures and compositions of the points found were compared with the data obtained from the study of non-quasi-binary sections, as well as with the thermograms of the alloys near the assumed points. At the same time there was observed a consistency of graphic and experimental data. By means of a graphical interpolation of the primary crystallization curves of various phases and projections of the secondary discharge line, isotherms were deposited every 100 K on the composition triangle every 100 K.
In the PbS-Bi2S3-SnS ternary system there are 13 fields of primary crystallization of individual phases.
In the system, PbS-Bi2S3-SnS the most extensive are the fields, б- and в-SnS and PbS-Bi2S3- SnS.
The PbS-Bi2S3-SnS system has 32 points of invariant equilibria, of which 10 are points of triple eutectic, 3 are points of triple peritectic, 17 are points of double eutectic, and 2 are points of double peritectic.
Keywords: projection of the liquidus surface, polythermal sections, quasi-ternary system, quaternary compounds.