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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Insulated Gate Bipolar Transistor

N±Channel Enhancement±Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage±blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies.

•Industry Standard TO±220 Package

•High Speed Eoff: 67 J/Am typical at 125°C

•Low On±Voltage ± 1.7 V typical at 8.0 A, 125°C

•Robust High Voltage Termination

•ESD Protection Gate±Emitter Zener Diodes

C

G

E

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MGP15N60U

IGBT IN TO±220 15 A @ 90°C 26 A @ 25°C

600 VOLTS

VERY LOW

ON±VOLTAGE

G

C

E

CASE 221A±09, Style 9

TO±220AB

	Rating	Symbol		Value	Unit

Collector±Emitter Voltage		VCES		600	Vdc
Collector±Gate Voltage (RGE = 1.0 MW)		VCGR		600	Vdc
Gate±Emitter Voltage Ð Continuous		VGE		± 20	Vdc
Collector Current Ð	Continuous @ T C = 25°C	IC25		26	Adc
Ð	Continuous @ T C = 90°C	IC90		15
Ð Repetitive Pulsed Current (1)		ICM		30	Apk
Total Power Dissipation @ TC = 25°C		PD		96	Watts
Derate above 25°C				0.77	W/°C

Operating and Storage Junction Temperature Range		TJ, Tstg		± 55 to 150	°C
Thermal Resistance	Ð Junction to Case ± IGBT	RqJC		1.3	°C/W
	Ð Junction to Ambient	RqJA		65
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds		TL		200	°C
Mounting Torque, 6±32 or M3 screw			10 lbfSin (1.13 NSm)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Motorola,IncIGBT. 1997 Device Data

MGP15N60U

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±to±Emitter Breakdown Voltage		V(BR)CES				Vdc
(VGE = 0 Vdc, IC = 25 mAdc)			600	Ð	Ð	mV/°C
Temperature Coefficient (Positive)			Ð	870	Ð	mV/°C

Emitter±to±Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)		V(BR)ECS	15	Ð	Ð	Vdc
Zero Gate Voltage Collector Current		ICES				mAdc
(VCE = 600 Vdc, VGE = 0 Vdc)			Ð	Ð	10
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)			Ð	Ð	200
Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)		IGES	Ð	Ð	50	mAdc
ON CHARACTERISTICS (1)

Collector±to±Emitter On±State Voltage		VCE(on)				Vdc
(VGE = 15 Vdc, IC = 4.0 Adc)			Ð	1.4	1.7
(VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125°C)			Ð	1.3	Ð
(VGE = 15 Vdc, IC = 8.0 Adc)			Ð	1.7	2.0
Gate Threshold Voltage		VGE(th)				Vdc
(VCE = VGE, IC = 1.0 mAdc)			3.0	5.5	7.0	mV/°C
Threshold Temperature Coefficient (Negative)			Ð	10	Ð	mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc)		gfe	Ð	7.0	Ð	Mhos
DYNAMIC CHARACTERISTICS

Input Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Cies	Ð	806	Ð	pF
Output Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Coes	Ð	78	Ð
Output Capacitance	f = 1.0 MHz)	Coes	Ð	78	Ð
Transfer Capacitance		Cres	Ð	13	Ð
SWITCHING CHARACTERISTICS (1)

Turn±On Delay Time		td(on)	Ð	35	Ð	ns
Rise Time	(VCC = 360 Vdc, IC = 8.0 Adc,	tr	Ð	34	Ð
	VGE = 15 Vdc, L = 300 mH,
Turn±Off Delay Time	VGE = 15 Vdc, L = 300 mH,	td(off)	Ð	105	Ð
Turn±Off Delay Time	RG = 20 W, TJ = 25°C)	td(off)	Ð	105	Ð
	RG = 20 W, TJ = 25°C)
Fall Time	Energy losses include ªtailº	tf	Ð	200	Ð
Turn±Off Switching Loss		Eoff	Ð	250	Ð	mJ
Turn±On Delay Time		td(on)	Ð	36	Ð	ns
Rise Time	(VCC = 360 Vdc, IC = 8.0 Adc,	tr	Ð	39	Ð
	VGE = 15 Vdc, L = 300 mH,
Turn±Off Delay Time	VGE = 15 Vdc, L = 300 mH,	td(off)	Ð	206	Ð
Turn±Off Delay Time	RG = 20 W, TJ = 125°C)	td(off)	Ð	206	Ð
Fall Time	Energy losses include ªtailº	tf	Ð	255	Ð
Turn±Off Switching Loss		Eoff	Ð	510	Ð	mJ
Gate Charge	(VCC = 360 Vdc, IC = 8.0 Adc,	QT	Ð	39.2	Ð	nC
	(VCC = 360 Vdc, IC = 8.0 Adc,	Q1	Ð	8.7	Ð
	VGE = 15 Vdc)	Q1	Ð	8.7	Ð
		Q2	Ð	17.4	Ð
INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance		LE				nH
(Measured from the emitter lead 0.25″	from package to emitter bond pad)		Ð	7.5	Ð

(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2	Motorola IGBT Device Data

	40		17.5 V			15 V				40
			17.5 V			15 V		TJ = 25°C
(AMPS)	35							TJ = 25°C	(AMPS)	35
(AMPS)	30		20 V		12.5 V				(AMPS)	30
CURRENT			20 V		12.5 V				CURRENT
	25							VGE = 10 V		25
	20							VGE = 10 V		20
	20									20
, COLLECTOR	15								, COLLECTOR	15
	10									10

C	5								C	5
I									I

	0									0
	0	1	2	3	4	5	6	7	8
		VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

						MGP15N60U
		17.5 V		15 V			TJ = 125°C
							TJ = 125°C
		20 V		12.5 V
							VGE = 10 V
0	1	2	3	4	5	6	7	8
	VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics

Figure 2. Output Characteristics

(AMPS)	40
		VCE = 100 V
		5.0 mS PULSE WIDTH
CURRENT	30
CURRENT
COLLECTOR	20
	10		TJ = 125°C			25°C
	10					25°C
,
C
I
	0
	5	6	7	8	9	10	11	12	13	14	15	16

VGE, GATE±TO±EMITTER VOLTAGE (VOLTS)

(VOLTS)	1.8
(VOLTS)					IC = 8.0 A
VOLTAGE	1.7				6.0 A
					6.0 A

,COLLECTOR±TO±EMITTER	1.6
					4.0 A
	1.5
		VGE = 15 V
		80 mS PULSE WIDTH
	1.4
CE	1.4
CE	±50	±25	0	25	50	75	100	125	150
V	±50	±25	0	25	50	75	100	125	150
			TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Transfer Characteristics	Figure 4. Collector±To±Emitter Saturation
	Voltage versus Junction Temperature

						(VOLTS)	20
	1600				TJ = 25°C
					TJ = 25°C		16
C, CAPACITANCE (pF)					VGE = 0 V	GATE±TO±EMITTER VOLTAGE
	1200		Cies				12
							12
	800	Coes					8
		Coes					8
	400	Cres					4
						,
						GE
	0					V	0
	0			15	20	25	0
	0	5	10	15	20	25

VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

			QT
	Q1	Q2
				TJ = 25°C
				VCC = 300 V
				IC = 8.0 A
0	10	20	30	40	50
		QG, TOTAL GATE CHARGE (nC)

Figure 5. Capacitance Variation	Figure 6. Gate±To±Emitter Voltage versus
	Total Charge

Motorola IGBT Device Data

3

MGP15N60U
	0.8
(mJ)		VCC = 360 V
(mJ)	0.7	VGE = 15 V
LOSSES	0.7	VGE = 15 V
		RG = 20 W		IC = 8.0 A
	0.6			IC = 8.0 A
ENERGY	0.5
ENERGY				6.0 A
TURN±OFF				6.0 A
	0.4
	0.3			4.0 A
,				4.0 A
off
off
E
	0.2
	5	15	20	25	35	50

RG, GATE RESISTANCE (OHMS)

Figure 7. Turn±Off Losses versus Gate

	0.8
(mJ)	0.7	VCC = 360 V
LOSSES	0.6	VGE = 15 V					IC = 8.0 A
	0.6	RG = 20 W					IC = 8.0 A
	0.5							6.0 A
ENERGY	0.5							6.0 A
	0.4							4.0 A

, TURN±OFF
	0.3
	0.2

off	0.1
E	0.1
E
	0
	±50	±25	0	25	50	75	100	125	150
			TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Turn±Off Losses versus Junction

				Resistance								Temperature
LOSSESENERGYTURN±OFF(mJ)	1.0								(AMPS)CURRENTCOLLECTOR	100
LOSSESENERGYTURN±OFF(mJ)	0.8	TJ = 125°C							(AMPS)CURRENTCOLLECTOR		RG = 20 W
		VCC = 360 V
		VGE = 15 V
	0.6	RG = 20 W
										10
	0.4										TJ = 125°C
											TJ = 125°C
											VGE = 15 V
,	0.2								,
off									C
off									I
E
	0									1
	0	1	2	3	4	5	6	7	8	1	10	100	1000
			IC, COLLECTOR CURRENT (AMPS)								VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 9. Turn±Off Losses versus Collector	Figure 10. Reverse Biased Safe Operating
Current	Area

4	Motorola IGBT Device Data

MGP15N60U

PACKAGE DIMENSIONS

	4
Q	A

1	2	3
H
Z		K
Z
L
V
G
		D
	N

	±T±	PLANESEATING
T	C
T	S
		STYLE 9:
		PIN 1.	GATE
U		2.	COLLECTOR
		3.	EMITTER
		4.	COLLECTOR

R

J

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

CASE 221A±09

ISSUE Z

Motorola IGBT Device Data

5

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