Материал: 2N6050RE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6050/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general±purpose amplifier and low frequency switching applications.
• High DC Current Gain Ð
hFE = 3500 (Typ) @ IC = 5.0 Adc |
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• Collector±Emitter Sustaining Voltage Ð @ 100 mA |
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VCEO(sus) = 60 Vdc (Min) Ð 2N6050, 2N6057 |
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VCEO(sus) = 80 Vdc (Min) Ð 2N6051, 2N6058 |
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VCEO(sus) = 100 Vdc (Min) Ð 2N6052, 2N6059 |
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• Monolithic Construction with Built±In Base±Emitter Shunt Resistors |
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MAXIMUM RATINGS (1) |
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2N6050 |
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2N6051 |
2N6052 |
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Rating |
Symbol |
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2N6057 |
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2N6058 |
2N6059 |
Unit |
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Collector±Emitter Voltage |
VCEO |
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60 |
80 |
100 |
Vdc |
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Collector±Base Voltage |
VCB |
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60 |
80 |
100 |
Vdc |
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Emitter±Base voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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12 |
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Adc |
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Peak |
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20 |
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Base Current |
IB |
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0.2 |
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Adc |
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Total Device Dissipation |
PD |
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150 |
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Watts |
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@TC = 25_C |
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Derate above 25_C |
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0.857 |
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W/ C |
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Operating and Storage Junction |
TJ, Tstg |
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± 65 to +200_C |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Rating |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.17 |
_C/W |
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(1) Indicates JEDEC Registered Data. |
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PNP
2N6050 thru
2N6052*
NPN
2N6057 thru 2N6059*
*Motorola Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS 60 ± 80 ± 100 VOLTS 150 WATTS
CASE 1±07 TO±204AA (TO±3)
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160 |
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(WATTS) |
140 |
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120 |
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DISSIPATION |
100 |
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80 |
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60 |
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, POWER |
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40 |
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D |
20 |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
2N6050 thru 2N6052 2N6057 thru 2N6059
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
(IC = 100 mAdc, IB = 0) |
2N6050, 2N6057 |
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60 |
Ð |
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2N6051, 2N6058 |
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80 |
Ð |
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2N6052, 2N6059 |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 30 Vdc, IB = 0) |
2N6050, 2N6057 |
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1.0 |
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(VCE = 40 Vdc, IB = 0) |
2N6051, 2N6058 |
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1.0 |
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(VCE = 50 Vdc, IB = 0) |
2N6052, 2N6059 |
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Ð |
1.0 |
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Collector Cutoff Current |
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ICEX |
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mAdc |
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc) |
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0.5 |
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(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C) |
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5.0 |
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Emitter Cutoff Current |
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IEBO |
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2.0 |
mAdc |
(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
(IC = 6.0 Adc, VCE = 3.0 Vdc) |
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750 |
18,000 |
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(IC = 12 Adc, VCE = 3.0 Vdc) |
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100 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 6.0 Adc, IB = 24 mAdc) |
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2.0 |
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(IC = 12 Adc, IB = 120 mAdc) |
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Ð |
3.0 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
Ð |
4.0 |
Vdc |
(IC = 12 Adc, IB = 120 mAdc) |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
2.8 |
Vdc |
(IC = 6.0 Adc, VCE = 3.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Magnitude of Common Emitter Small±Signal Short Circuit Forward |
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|hfe| |
4.0 |
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MHz |
Current Transfer Ratio |
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(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |
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Output Capacitance |
2N6050/2N6052 |
Cob |
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500 |
pF |
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
2N6057/2N6059 |
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Ð |
300 |
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Small±Signal Current Gain |
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hfe |
300 |
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Ð |
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) |
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* Indicates JEDEC Registered Data. |
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(1) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2.0%. |
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RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1 MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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R |
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approx |
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B |
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+ 8.0 |
V |
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0 |
51 |
D1 |
≈ 5.0 k |
≈ 50 |
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V1 |
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+ 4.0 V |
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approx |
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± 8.0 V |
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25 |
μ |
s |
for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0 |
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DUTY CYCLE = 1.0% |
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For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
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10 |
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5.0 |
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2N6050/2N6052 |
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2N6057/2N6059 |
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ts |
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μs) |
2.0 |
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tf |
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t, TIME |
1.0 |
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0.5 |
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tr |
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td @ VBE(off) = 0 |
VCC = 30 V |
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0.2 |
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IC/IB = 250 |
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IB1 = IB2 |
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0.1 |
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TJ = 25°C |
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0.2 |
0.5 |
1.0 |
3.0 |
5.0 |
10 |
20 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 3. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |
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2N6050 |
thru |
2N6052 |
2N6057 |
thru |
2N6059 |
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1.0 |
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EFFECTIVE TRANSIENT THERMAL |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
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0.3 |
0.2 |
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0.2 |
0.1 |
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R |
(t) = r(t) R |
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P(pk) |
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0.1 |
0.05 |
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θJC |
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° |
θJC |
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0.07 |
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RθJC = 1.17 C/W MAX |
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0.02 |
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D CURVES APPLY FOR POWER |
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0.05 |
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PULSE TRAIN SHOWN |
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t1 |
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0.03 |
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READ TIME AT t1 |
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t |
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0.01 |
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TJ(pk) ± TC = P(pk) θJC(t) |
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2 |
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SINGLE PULSE |
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DUTY CYCLE, D = t1/t2 |
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r(t), |
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0.02 |
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0.01 |
0.02 |
0.03 |
0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
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100 |
200 |
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500 |
1000 |
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0.01 |
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t, TIME (ms)
Figure 4. Thermal Response
ACTIVE±REGION SAFE OPERATING AREA
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50 |
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(AMP) |
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20 |
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0.1 ms |
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10 |
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CURRENT |
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5.0 |
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0.5 ms |
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2.0 |
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1.0 ms |
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, COLLECTOR |
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1.0 |
TJ = 200°C |
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0.5 |
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SECOND |
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5.0 ms |
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BREAKDOWN |
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LIMITED |
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BONDING |
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0.2 |
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WIRE |
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LIMITED |
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C |
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THERMAL |
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I |
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0.1 |
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LIMITATION |
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dc |
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@ TC = 25°C |
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(SINGLE PULSE) |
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0.05 |
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30 |
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100 |
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10 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. 2N6050, 2N6057
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50 |
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20 |
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0.1 ms |
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(AMP) |
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10 |
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CURRENT |
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5.0 |
0.5 ms |
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1.0 ms |
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2.0 |
5.0 ms |
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COLLECTOR |
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1.0 |
TJ = 200°C |
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0.5 |
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SECOND |
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BREAKDOWN |
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LIMITED |
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0.2 |
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BONDING |
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WIRE |
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LIMITED |
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C |
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dc |
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I |
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THERMAL |
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0.1 |
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LIMITATION |
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@ TC = 25°C |
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(SINGLE PULSE) |
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0.05 |
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100 |
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10 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 6. 2N6051, 2N6058
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20 |
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0.1 ms |
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(AMP) |
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10 |
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CURRENT |
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5.0 |
0.5 ms |
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1.0 ms |
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2.0 |
5.0 ms |
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COLLECTOR |
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1.0 |
TJ = 200°C |
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0.5 |
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SECOND |
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BREAKDOWN |
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LIMITED |
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0.2 |
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BONDING |
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WIRE |
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, |
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dc |
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LIMITED |
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C |
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I |
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THERMAL |
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0.1 |
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LIMITATION |
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@ TC = 25°C |
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(SINGLE PULSE) |
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0.05 |
20 |
30 |
50 |
70 |
100 |
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10 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 7. 2N6052, 2N6059
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C; TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
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3000 |
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= 25°C |
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500 |
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2000 |
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T |
C |
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° |
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GAIN |
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TJ = 25 C |
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VCE = 3.0 V |
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300 |
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1000 |
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IC = 5.0 A |
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SMALL±SIGNAL CURRENT |
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500 |
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200 |
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Cib |
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200 |
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Cob |
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100 |
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100 |
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2N6050/2N6052 |
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(pF)CAPACITANCEC, |
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2N6050/2N6052 |
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, |
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2N6057/2N6059 |
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70 |
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fe |
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h |
50 |
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2N6057/2N6059 |
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30 |
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50 |
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1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1000 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
||
f, FREQUENCY (kHz) |
VR, REVERSE VOLTAGE (VOLTS) |
Figure 8. Small±Signal Current Gain |
Figure 9. Capacitance |
|
|
Motorola Bipolar Power Transistor Device Data |
3 |
2N6050 |
thru |
2N6052 |
2N6057 |
thru |
2N6059 |
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PNP |
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2N6050, 2N6051, 2N6052 |
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20,000 |
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10,000 |
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VCE = 3.0 V |
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TJ = 150°C |
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GAIN |
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5000 |
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, DC CURRENT |
3000 |
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25°C |
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2000 |
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1000 |
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± 55°C |
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FE |
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h |
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500 |
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300 |
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200 |
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0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
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0.2 |
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IC, COLLECTOR CURRENT (AMP) |
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NPN |
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2N6057, 2N6058, 2N6059 |
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40,000 |
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20,000 |
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TJ = 150°C |
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VCE = 3.0 V |
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GAIN |
10,000 |
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, DC CURRENT |
6,000 |
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25°C |
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4,000 |
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2,000 |
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FE |
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h |
1,000 |
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± 55°C |
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600 |
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400 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
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0.2 |
||||||||
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IC, COLLECTOR CURRENT (AMP) |
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Figure 10. DC Current Gain
(VOLTS) |
3.0 |
TJ = 25°C |
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VOLTAGE |
2.6 |
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IC = 3.0 A |
6.0 A |
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9.0 A |
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12 A |
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2.2 |
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, COLLECTOR±EMITTER |
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1.8 |
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1.4 |
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CE |
1.0 |
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V |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
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0.5 |
||||||||
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IB, BASE CURRENT (mA) |
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(VOLTS) |
3.0 |
TJ = 25°C |
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VOLTAGE |
2.6 |
IC = 3.0 A |
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6.0 A |
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9.0 A |
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12 A |
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2.2 |
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, COLLECTOR±EMITTER |
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1.8 |
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1.4 |
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CE |
1.0 |
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V |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
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0.5 |
||||||||
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IB, BASE CURRENT (mA) |
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Figure 11. Collector Saturation Region
|
3.0 |
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TJ = 25°C |
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2.5 |
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(VOLTS) |
2.0 |
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V, VOLTAGE |
1.5 |
VBE(sat) @ IC/IB = 250 |
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VBE @ VCE = 3.0 V |
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|
1.0 |
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0.5 |
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VCE(sat) @ IC/IB = 250 |
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||
|
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
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0.2 |
||||||||
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IC, COLLECTOR CURRENT (AMP) |
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3.0 |
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TJ = 25°C |
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2.5 |
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(VOLTS) |
2.0 |
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|
V, VOLTAGE |
1.5 |
VBE(sat) @ IC/IB = 250 |
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VBE @ VCE = 3.0 V |
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|
1.0 |
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VCE(sat) @ IC/IB = 250 |
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||
|
0.5 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
|
0.2 |
||||||||
IC, COLLECTOR CURRENT (AMP)
Figure 12. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
2N6050 thru 2N6052 2N6057 thru 2N6059
PACKAGE DIMENSIONS
|
A |
|
|
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N |
|
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|
|
NOTES: |
|
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C |
|
|
|
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|
|
1. DIMENSIONING AND TOLERANCING PER ANSI |
||||
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|
|
Y14.5M, 1982. |
|
|
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||
|
|
±T± |
SEATING |
|
|
2. CONTROLLING DIMENSION: INCH. |
|
|||||
|
E |
|
|
PLANE |
|
|
3. ALL RULES AND NOTES ASSOCIATED WITH |
|||||
|
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|
|
REFERENCED TO±204AA OUTLINE SHALL APPLY. |
|||||
|
D 2 PL |
K |
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|||||
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|
|
INCHES |
MILLIMETERS |
||||
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|||||
|
0.13 (0.005) M |
T |
Q |
M |
Y |
M |
|
|||||
|
DIM |
MIN |
MAX |
MIN |
MAX |
|||||||
|
U |
|
|
|
|
|
|
A |
1.550 REF |
39.37 REF |
||
|
±Y± |
|
|
|
|
B |
±±± |
1.050 |
±±± |
26.67 |
||
V |
L |
|
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|
|
|||||||
|
|
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|
|
C |
0.250 |
0.335 |
6.35 |
8.51 |
||
|
2 |
|
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|
|
D |
0.038 |
0.043 |
0.97 |
1.09 |
|
|
B |
|
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|
|
E |
0.055 |
0.070 |
1.40 |
1.77 |
|
H |
G |
|
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|
|
G |
0.430 BSC |
10.92 BSC |
|||
1 |
|
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|
|
H |
0.215 BSC |
5.46 BSC |
|||
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|
K |
0.440 |
0.480 |
11.18 |
12.19 |
|
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|||||
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|
L |
0.665 BSC |
16.89 BSC |
||
|
±Q± |
|
|
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|
|
N |
±±± |
0.830 |
±±± |
21.08 |
|
0.13 (0.005) M |
T |
Y |
M |
|
|
|
Q |
0.151 |
0.165 |
3.84 |
4.19 |
|
|
|
|
U |
1.187 BSC |
30.15 BSC |
||||||
|
|
|
|
|
|
|
|
V |
0.131 |
0.188 |
3.33 |
4.77 |
|
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|
|
STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
|
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CASE: COLLECTOR |
|
|
||
CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |