Материал: murh8100erev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MURH8100E/D
Advance Information |
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SWITCHMODE |
MURH8100E |
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Ultrafast •E" Series Power Rectifier |
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Plastic TO±220 Package |
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ULTRAFAST RECTIFIER |
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Features mesa epitaxial construction with glass passivation. Ideally suited high |
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8.0 AMPERES |
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frequency switching power supplies; free wheeling diodes; polarity protection diodes; |
1000 VOLTS |
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and inverters. |
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•20 mjoules Avalanche Energy Guaranteed
•Ultrafast 50 Nanoseconds Recovery Time
• Stable, High Temperature, Glass Passivated Junction |
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• Monolithic Dual Die Construction. |
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May be Paralleled for High Current Output. |
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Mechanical Characteristics: |
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• Case: Molded Epoxy |
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• Epoxy meets UL94, VO at 1/8″ |
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• Weight: 1.9 grams (approximately) |
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• Finish: All External Surfaces Corrosion Resistant and Terminal |
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Leads are Readily Solderable |
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CASE 221B±03 |
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• Maximum Temperature of 260°C / 10 Seconds for Soldering |
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TO±220AC |
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•Shipped in 50 Units per Plastic Tube
•Marking: H8100E
MAXIMUM RATINGS
Rating |
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Symbol |
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Value |
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Unit |
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Peak Repetitive Reverse Voltage |
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VRRM |
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1000 |
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Working Peak Reverse Voltage |
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VRWM |
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DC Blocking Voltage |
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VR |
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Average Rectified Forward Current |
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Per Leg |
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IO |
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4.0 |
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A |
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(At Rated VR, TC = 150°C) |
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Per Package |
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Peak Repetitive Forward Current |
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Per Leg |
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IFRM |
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8.0 |
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A |
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(At Rated VR, Square Wave, 20 kHz, TC = 150°C) |
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Non±Repetitive Peak Surge Current |
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Per Package |
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IFSM |
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100 |
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A |
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(Surge applied at rated load conditions, halfwave, single phase, 60 Hz) |
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Storage / Operating Case Temperature |
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Tstg, TC |
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± 55 to +175 |
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°C |
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Operating Junction Temperature |
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TJ |
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± 55 to +175 |
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°C |
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THERMAL CHARACTERISTICS |
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Thermal Resistance Ð Junction±to±Case |
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Per Leg |
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RθJC |
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2.0 |
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°C/W |
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ELECTRICAL CHARACTERISTICS |
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Rating |
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Symbol |
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Value |
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Maximum Instantaneous Forward Voltage |
(1) |
, see Figure 2 |
Per Leg |
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F |
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° |
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V |
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TJ = 25 C |
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TJ = 100 C |
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(IF = 4.0 A) |
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2.2 |
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1.8 |
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(IF = 8.0 A) |
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2.6 |
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2.1 |
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Maximum Instantaneous Reverse Current, see Figure 4 |
Per Leg |
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° |
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mA |
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R |
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TJ = 25 C |
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TJ = 100 C |
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(VR = 1000 V) |
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10 |
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100 |
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(VR = 500 V) |
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4.0 |
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55 |
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(1) Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
SWITCHMODE is a trademark of Motorola, Inc.
Rectifier Device Data
Motorola, Inc. 1997
MURH8100E
ELECTRICAL CHARACTERISTICS (continued)
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Maximum Reverse Recovery Time |
(2) |
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Per Leg |
t |
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ns |
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rr |
TJ = 25 C |
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TJ = 125 C |
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(VR = 30 |
V, IF = 1.0 A, di/dt = 50 A/ms) |
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50 |
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80 |
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(VR = 30 |
V, IF = 8.0 A, di/dt = 100 A/ |
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75 |
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100 |
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Typical ta @ 8.0 (A) |
ta |
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41 |
ns |
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Typical tb @ 8.0 (A) |
tb |
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Typical Peak Reverse Recovery Current |
Per Leg |
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A |
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rm |
TJ = 25 C |
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TJ = 125 C |
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(VR = 30 |
V, IF = 1.0 A, di/dt = 50 A/ms) |
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1.5 |
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2.2 |
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(VR = 30 |
V, IF = 8.0 A, di/dt = 100 A/ |
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3.7 |
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5.5 |
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Controlled Avalanche Energy |
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Waval |
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20 |
mJ |
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(See Test Circuit in Figure 9) |
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(2) trr measured projecting from 25% of IRM to ground.
(AMPS) |
100 |
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(AMPS) |
100 |
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100°C |
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25°C |
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FORWARD CURRENT |
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TJ = 175°C |
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FORWARD CURRENT |
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10 |
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10 |
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,INSTANTANEOUS |
1.0 |
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,INSTANTANEOUS |
1.0 |
0.1 |
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0.1 |
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0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
2.2 |
2.4 |
2.6 |
2.8 |
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F |
F |
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VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) |
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TJ = 175°C |
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100°C |
25°C |
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0.6 |
1.0 |
1.4 |
1.8 |
2.2 |
2.6 |
3.0 |
3.4 |
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) |
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Figure 1. Typical Forward Voltage |
Figure 2. Maximum Forward Voltage |
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1.E±03 |
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TJ = 175°C |
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REVERSE CURRENT (AMPS) |
1.E±03 |
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REVERSECURRENT (AMPS) |
1.E±04 |
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1.E±04 |
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100°C |
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1.E±05 |
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1.E±05 |
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1.E±06 |
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25°C |
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1.E±06 |
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1.E±07 |
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MAXIMUM |
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R |
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1.E±08 |
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1.E±07 |
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500 |
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900 |
1000 |
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VR, REVERSE VOLTAGE (VOLTS) |
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TJ = 100°C |
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25°C |
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100 |
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500 |
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700 |
800 |
900 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 3. Typical Reverse Current |
Figure 4. Maximum Reverse Current |
2 |
Rectifier Device Data |
(AMPS) |
14 |
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dc |
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FREQ = 20 kHz |
(WATTS) |
18 |
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16 |
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12 |
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FORWARDCURRENT |
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POWER DISSIPATION |
14 |
10 |
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SQUARE WAVE |
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12 |
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8.0 |
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Ipk/Io = p |
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10 |
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6.0 |
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Ipk/Io = 5.0 |
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8.0 |
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6.0 |
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,AVERAGE |
4.0 |
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, AVERAGE |
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Ipk/Io = 10 |
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4.0 |
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2.0 |
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Ipk/Io = 20 |
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2.0 |
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O |
0 |
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FO |
0 |
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P |
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20 |
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100 |
120 |
140 |
160 |
180 |
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TC, CASE TEMPERATURE (°C) |
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MURH8100E |
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Ipk/Io = 20 |
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Ipk/Io = 5.0 |
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Ipk/Io = 10 |
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Ipk/Io = p |
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dc |
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SQUARE WAVE |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
6.0 |
7.0 |
8.0 |
9.0 |
10 |
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IO, AVERAGE FORWARD CURRENT (AMPS) |
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Figure 5. Current Derating, Per Leg |
Figure 6. Forward Power Dissipation, Per Leg |
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1000 |
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(pF) |
100 |
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CAPACITANCE |
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TJ = 25°C |
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10 |
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C, |
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1.0 |
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20 |
40 |
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80 |
100 |
120 |
140 |
160 |
180 |
200 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 7. Capacitance
(NORMALIZED) |
1.0 |
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RqJC |
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RESISTANCE |
0.1 |
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THERMAL |
0.01 |
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TRANSIENT |
0.001 |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1.0 |
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r(t), |
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t, TIME (s)
Figure 8. Thermal Response
Rectifier Device Data |
3 |
MURH8100E |
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+VDD |
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IL |
40 mH COIL |
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BVDUT |
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VD |
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MERCURY |
ID |
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ID |
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SWITCH |
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IL |
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DUT |
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S1 |
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VDD |
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t0 |
t1 |
t2 |
t |
Figure 9. Test Circuit |
Figure 10. Current±Voltage Waveforms |
The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of the new ªE'' series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2.
By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 11, shows the test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed is approximately 20 mjoules.
Although it is not recommended to design for this condition, the new ªE'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments.
EQUATION (1): |
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1 LI |
2 |
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BVDUT |
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LPK BV |
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AVAL [ 2 |
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DUT DD |
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EQUATION (2): |
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1 |
2 |
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WAVAL [ 2 LI LPK |
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CH1 |
500V |
A |
20ms |
953 V |
VERT |
CHANNEL 2: |
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IL |
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CH2 |
50mV |
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0.5 AMPS/DIV. |
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CHANNEL 1: |
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VDUT |
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500 VOLTS/DIV. |
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TIME BASE: |
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20 ms/DIV. |
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1 |
ACQUISITIONS |
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217:33 HRS |
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SAVEREF SOURCE |
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STACK |
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CH1 |
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CH2 |
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REF |
REF |
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Figure 11. Current±Voltage Waveforms
4 |
Rectifier Device Data |
MURH8100E
PACKAGE DIMENSIONS
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C |
B |
F |
T |
S |
Q |
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4 |
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A |
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1 |
3 |
U |
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H |
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K |
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L |
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D |
R |
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G |
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J |
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NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.595 |
0.620 |
15.11 |
15.75 |
B |
0.380 |
0.405 |
9.65 |
10.29 |
C |
0.160 |
0.190 |
4.06 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.89 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.190 |
0.210 |
4.83 |
5.33 |
H |
0.110 |
0.130 |
2.79 |
3.30 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.14 |
1.52 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.14 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.48 |
U |
0.000 |
0.050 |
0.000 |
1.27 |
CASE 221B±04
ISSUE C
Rectifier Device Data |
5 |