Документ: 9858, страницы 1-5 | Студенческое хранилище

DISCRETE SEMICONDUCTORS

k, halfpage

M3D087

PZTM1102

PNP transistor/Schottky-diode module

Product speciﬁcation			1996 May 09
File under Discrete Semiconductors, SC01

Philips Semiconductors	Product speciﬁcation


PNP transistor/Schottky-diode module	PZTM1102

FEATURES

∙Low output capacitance

∙Fast switching time

∙Integrated Schottky protection diode.

APPLICATIONS

∙High-speed switching for industrial applications.

PINNING

PIN	DESCRIPTION

1	cathode Schottky

2	base

3	emitter

4	collector, anode Schottky

DESCRIPTION

Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101.

handbook, halfpage			4	1

4

				2
				2
	1	2	3	3
Top view				3
Top view				MAM237

Marking code: TM1102.

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

PNP transistor

VCBO	collector-base voltage	open emitter	−	−40	V
VCES	collector-emitter voltage	VBE = 0	−	−40	V
VEBO	emitter-base voltage	open collector	−	−6	V
IC	collector current (DC)		−	−200	mA
Schottky barrier diode

VR	continuous reverse voltage		−	40	V
IF	forward current (DC)		−	1	A
IF(AV)	average forward current		−	1	A
P	power dissipation	up to Tamb = 25 °C; note 1	−	0.5	W
Tj	junction temperature	reverse current applied	−	125	°C
		forward current applied	−	150	°C

Combined device

Ptot	total power dissipation	up to Tamb = 25 °C; note 2	−	1.2	W
Tamb	operating ambient temperature		−55	+150	°C
Tstg	storage temperature		−55	+150	°C
Tj	junction temperature		−	150	°C

Notes

1.An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W.

2.It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.

1996 May 09

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Philips Semiconductors				Product speciﬁcation

PNP transistor/Schottky-diode module				PZTM1102

ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise speciﬁed.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

NPN transistor

V(BR)CBO	collector-base breakdown	open emitter; IC = −10 μA; IE = 0;	−40	−	V
	voltage	Tamb = −55 to +150 °C; note 1
V(BR)CES	collector-emitter	open base; IC = −1 mA; VBE = 0;	−40	−	V
	breakdown voltage	Tamb = −55 to +150 °C; note 1
V(BR)EBO	emitter-base breakdown	open collector; IE = −10 μA; IC = 0;	−6	−	V
	voltage	Tamb = −55 to +150 °C; note 1
ICES	collector-emitter cut-off	VCE = −20 V; VBE = 0	−	100	nA
	current	VCE = −20 V; VBE = 0; Tamb = −55 to +150 °C	−	50	μA
IEBO	emitter-base cut-off current	VEB = −6 V; IC = 0	−	50	nA
		VEB = −6 V; IC = 0; Tamb = −55 to +150 °C	−	10	μA
VCEsat	collector-emitter saturation	note 1
	voltage	IC = −10 mA; IB = −1 mA	−	−200	mV
		IC = −50 mA; IB = −3.2 mA	−	−300	mV
VCEsat	collector-emitter saturation	Tamb = −55 to +150 °C; note 1
	voltage	IC = −10 mA; IB = −1 mA	−	−250	mV
		IC = −50 mA; IB = −3.2 mA	−	−350	mV
VBEsat	base-emitter saturation	note 1
	voltage	IC = −10 mA; IB = −1 mA	−	−850	mV
		IC = −50 mA; IB = −5 mA	−	−950	mV
VBEsat	base-emitter saturation	Tamb = −55 to +150 °C; note 1
	voltage	IC = −10 mA; IB = −1 mA	−	−1.0	V
		IC = −50 mA; IB = −5 mA	−	−1.1	V
Cob	output capacitance	IE = ie = 0; VCB = −5 V; f = 1 MHz	−	4.5	pF
Cib	input capacitance	IC = ic = 0; VEB = −0.5 V; f = 1 MHz	−	10	pF
fT	transition frequency	IC = −10 mA; VCE = −20 V; f = 100 MHz	250	−	MHz
hFE	DC current gain	VCE = −1 V; note 1
		IC = −0.1 mA	40	−
		IC = −1 mA	70	−
		IC = −10 mA	100	300
		IC = −100 mA	30	−
hFE	DC current gain	VCE = −1 V; Tamb = −55 to +150 °C; note 1
		IC = −10 mA	60	500
		IC = −100 mA	15	−
SWITCHING TIMES (see Figs 2 and 3)

td	delay time	VCC = 5 V	3	7	ns
tr	rise time	IC = 50 mA	13	23	ns
ts	storage time	Vi = 0 to 5 V	200	380	ns
tf	fall time		50	80	ns

1996 May 09

3

Philips Semiconductors				Product speciﬁcation

PNP transistor/Schottky-diode module				PZTM1102


SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

Schottky barrier diode

VF	forward voltage	IF = 100 mA; note 1	−	330	mV
		IF = 100 mA; Tamb = −55 to +150 °C; note 1	−	400	mV
		IF = 1 A; note 1	−	500	mV
		IF = 1 A; Tamb = −55 to +150 °C; note 1	−	560	mV
IR	reverse current	VR = 40 V; note 1	−	300	μA
		VR = 40 V; Tj = 125 °C;	−	35(2)	mA
		Tamb = −55 to +150 °C; note 1
IR	reverse current	VR = 10 V; note 1	−	40	μA
		VR = 10 V; Tj = 125 °C;	−	15(2)	mA
		Tamb = −55 to +150 °C; note 1
Cj	junction capacitance	VR = 0 V; f = 1 MHz	−	250	pF

Notes

1.Measured under pulsed conditions: tp ≤ 300 μs; δ ≤ 0.01.

2.Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with forward voltage applied.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT

Rth j-a	thermal resistance from junction to ambient (for the transistor)	note 1	100	K/W
Rth j-a	thermal resistance from junction to ambient (for the Schottky diode)	note 1	250	K/W

Note

1. Refer to SOT223 standard mounting conditions.

1996 May 09

4

Philips Semiconductors	Product speciﬁcation

PNP transistor/Schottky-diode module	PZTM1102

GRAPHICAL DATA

handbook, halfpage

5 V

handbook, halfpage

VCC = 5 V DC

INPUT

Vi

0 V

7.5 kΩ

5.23 Ω

tp

5 V

(5%)

(1%)

Vo

10%

Vi

DUT

90%

0 V

825

Ω

Vo (pin 4)

OUTPUT

(1%)

90 Ω

10%

90%

(1%)

td

tf

MBH222

tr

ts

ton

toff

MBH223

tr < 5 ns (10% to 90%); tp = 1 μs; δ = 0.02; Zi = 50 Ω. ton = td + tr; toff = ts + tf.

Fig.2 Switching times test circuit.

Fig.3 Input and output waveforms.

1996 May 09

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